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SI2309DS-T1-E3

SI2309DS-T1-E3
Mfr. #:
SI2309DS-T1-E3
メーカー:
Vishay / Siliconix
説明:
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
ライフサイクル:
メーカー新製品
データシート:
SI2309DS-T1-E3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2309DS-T1-E3 DatasheetSI2309DS-T1-E3 Datasheet (P4-P5)
ECAD Model:
製品属性
属性値
メーカー：
ビシェイ
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
SOT-23-3
商標名：
TrenchFET
包装：
リール
高さ：
1.45 mm
長さ：
2.9 mm
シリーズ：
SI2
幅：
1.6 mm
ブランド：
Vishay / Siliconix
製品タイプ：
MOSFET
ファクトリーパックの数量：
3000
サブカテゴリ：
MOSFET
パーツ番号エイリアス：
SI2309DS-E3
単位重量：
0.000282 oz
Tags
SI2309DS-T1, SI2309DS-T, SI2309D, SI2309, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23 Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23
***ied Electronics & Automation
MOSFET, Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.25A; On Resistance, Rds(on):0.55ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SOT-23 ;RoHS Compliant: Yes
***nell
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:1.25A; Resistance, Rds On:0.34ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:8A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; Resistance, Rds on Max:0.34ohm; SMD Marking:A9; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:-1V; Width, External:3.05mm; Width, Tape:8mm
モデル メーカー 説明 ストック 価格
SI2309DS-T1-E3
DISTI # SI2309DS-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI2309DS-T1-E3
    DISTI # SI2309DS-T1-E3CT-ND    		Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI2309DS-T1-E3
      DISTI # SI2309DS-T1-E3DKR-ND      		Vishay SiliconixMOSFET P-CH 60V 1.25A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI2309DS-T1-E3
        DISTI # 70026067        		Vishay SiliconixMOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
        RoHS: Compliant        		0
        • 1:$0.6200
        • 100:$0.5900
        • 250:$0.5600
        • 500:$0.5300
        • 1000:$0.5100
        SI2309DS-T1-E3
        DISTI # 781-SI2309DS-E3        		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
        RoHS: Compliant        		0
          SI2309DS-T1
          DISTI # 781-SI2309DS          		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
          RoHS: Not compliant          		0
            画像 モデル 説明
            SI2309DS

            Mfr.#: SI2309DS

            OMO.#: OMO-SI2309DS

            		 MOSFET Plastic-Encapsulated MOSFET P-CH-60V
            SI2309DS-T1-E3

            Mfr.#: SI2309DS-T1-E3

            OMO.#: OMO-SI2309DS-T1-E3

            		 MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
            SI2309DS

            Mfr.#: SI2309DS

            OMO.#: OMO-SI2309DS-1190

            		 MOSFET Plastic-Encapsulated MOSFET P-CH-60V
            SI2309DS , M1MA151KT2

            Mfr.#: SI2309DS , M1MA151KT2

            OMO.#: OMO-SI2309DS-M1MA151KT2-1190

            		 ブランドニューオリジナル
            SI2309DS-T1

            Mfr.#: SI2309DS-T1

            OMO.#: OMO-SI2309DS-T1-1190

            		 MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
            SI2309DS-T1-E3

            Mfr.#: SI2309DS-T1-E3

            OMO.#: OMO-SI2309DS-T1-E3-VISHAY

            		 MOSFET P-CH 60V 1.25A SOT23-3
            SI2309DS-T1-GE3

            Mfr.#: SI2309DS-T1-GE3

            OMO.#: OMO-SI2309DS-T1-GE3-1190

            		 P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs
            SI2309DS-TI

            Mfr.#: SI2309DS-TI

            OMO.#: OMO-SI2309DS-TI-1190

            		 ブランドニューオリジナル
            SI2309DS-TI-E3

            Mfr.#: SI2309DS-TI-E3

            OMO.#: OMO-SI2309DS-TI-E3-1190

            		 ブランドニューオリジナル
            SI2309DST1

            Mfr.#: SI2309DST1

            OMO.#: OMO-SI2309DST1-1190

            		 Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
            可用性
            ストック:
            Available
            注文中:
            5500
            数量を入力してください:
            SI2309DS-T1-E3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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