SIZ730DT-T1-GE3

Name: Vishay - SIZ730DT-T1-GE3
Brand: Vishay
SKU: OMO-4657213
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIZ730DT-T1-GE3
メーカー:: Vishay
説明:: MOSFET 2N-CH 30V 16A 6-POWERPAIR
ライフサイクル:: メーカー新製品
データシート:: SIZ730DT-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-アレイ

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SIZ730DT-GE3

取り付けスタイル: SMD / SMT

パッケージ-ケース: 6-PowerPair

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 6-PowerPair

構成: デュアル

FETタイプ: 2 N-Channel (Half Bridge)

パワーマックス: 27W, 48W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 830pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 16A, 35A

Rds-On-Max-Id-Vgs: 9.3 mOhm @ 15A, 10V

Vgs-th-Max-Id: 2.2V @ 250μA

ゲートチャージ-Qg-Vgs: 24nC @ 10V

Pd-電力損失: 3.9 W 4.6 W

立ち下がり時間: 7 ns 10 ns

立ち上がり時間: 15 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 12.9 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Resistance: 7.5 mOhms 3.2 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 15.6 nC 43 nC

フォワード-相互コンダクタンス-最小: 48 S 80 S

Tags: SIZ7, SiZ

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ730DT-T1-GE3 説明

***ureElectronics: DualNChannel30V0013Ohm1232nC3946WSiliconMosfetPOWERPAIR6x37

***ical: TransMOSFETNCH30V129A264A6PinPowerPAIRTR

***ment14APAC: MOSFETDUALNCH30V16A35APOWERPA

***iKey: MOSFET2NCH30V16A6POWERPAIR

***S: MOSFETNCH30VDSPOWERPAIRSMD

***nell: DUALNCHPOWERPAIR30V9339MOHM

***ark: MOSFETDUALNCH30V16A35APOWERPAIR;TransistorPolarityNChannel;RdsonTestVoltageVgs10V;PowerDissipationPd48W;OperatingTemperatureRange55Cto150C;NoofPins6;ContinuousDrainCurrentIdNChannel35A;RoHSCompliantYes

Market price

モデル	メーカー	説明	ストック	価格
SIZ730DT-T1-GE3 DISTI # SIZ730DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 16A 6-POWERPAIR Min Qty: 1 Container: Cut Tape (CT)	2994In Stock	1000:$0.5715 500:$0.5798 100:$0.6174 10:$0.7050 1:$0.8600
SIZ730DT-T1-GE3 DISTI # SIZ730DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 16A 6-POWERPAIR Min Qty: 1 Container: Digi-Reel®	2994In Stock	1000:$0.6257 500:$0.7926 100:$0.9594 10:$1.2310 1:$1.3800
SIZ730DT-T1-GE3 DISTI # SIZ730DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 16A 6-POWERPAIR Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SIZ730DT-T1-GE3 DISTI # 65T1677	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes RoHS: Compliant	0
SIZ730DT-T1-GE3 DISTI # 83T3537	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 30V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant	0
SIZ730DT-T1-GE3 DISTI # 781-SIZ730DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 3.7 RoHS: Compliant	0
SIZ730DT-T1-GE3 DISTI # 2400401	Vishay Intertechnologies	MOSFET, 2 N CH, 30V, 16A, POWERPAIR-8 RoHS: Compliant	0	9000:$0.7810 6000:$0.8110 3000:$0.8530 1000:$0.9150 500:$1.1600 100:$1.3500 10:$1.7500 1:$2.1200
SIZ730DT-T1-GE3 DISTI # 2400401	Vishay Intertechnologies	MOSFET, 2 N CH, 30V, 16A, POWERPAIR-8 RoHS: Compliant	0	250:£0.2600 100:£0.2820 25:£0.3140 5:£0.3790

SIZ730DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes