ISP12DP06NMXTSA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SOT-223-4

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

- 60 V

Id - Continuous Drain Current:

- 2.8 A

Rds On - Drain-Source Resistance:

125 mOhms

Vgs th - Gate-Source Threshold Voltage:

- 4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

- 20.2 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

4.2 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

ISP06P008

Transistor Type:

1 P-Channel

Brand:

Infineon Technologies

Forward Transconductance - Min:

5.2 S

Fall Time:

7 ns

Product Type:

MOSFET

Rise Time:

9 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

23 ns

Typical Turn-On Delay Time:

8 ns

Part # Aliases:

ISP12DP06NM SP004987268

Tags

ISP12, ISP1, isp