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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SI4900DY-T1-E3 DISTI # V72:2272_07432390 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant | 43 |
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| SI4900DY-T1-E3 DISTI # V36:1790_07432390 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
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| SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3CT-ND | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 13982In Stock |
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| SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 13982In Stock |
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| SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3TR-ND | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 12500In Stock |
|
| SI4900DY-T1-E3 DISTI # 32675049 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant | 43 |
|
| SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI4900DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4900DY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4900DY-T1-E3 DISTI # SI4900DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI4900DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4900DY-T1-E3 DISTI # 09X6438 | Vishay Intertechnologies | MOSFET, DUAL N CHANNEL, 60V, 5.3A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes | 0 |
|
| SI4900DY-T1-E3 DISTI # 51K6968 | Vishay Intertechnologies | DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 |
|
| SI4900DY-T1-E3 DISTI # R1082540 | Vishay Dale | TRANSITOR,SI9933BDY RoHS: Compliant | 0 |
|
| SI4900DY-T1-E3 DISTI # 781-SI4900DY-E3 | Vishay Intertechnologies | MOSFET 60V 5.3A 3.1W RoHS: Compliant | 4962 |
|
| SI4900DY-T1-E3 DISTI # 1807298 | Vishay Intertechnologies | DUAL N-CH MOSFET SO-8 60V 58MOHM @ 10V, RL | 2350 |
|
| SI4900DY-T1-E3 | Vishay Intertechnologies | MOSFET 60V 5.3A 3.1W | Americas - |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3 |
MOSFET 60V 5.3A 3.1W |
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Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3 |
MOSFET 60V 5.3A 3.1W 58mohm @ 10V |
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Mfr.#: SI4900DY-T1-GE3 OMO.#: OMO-SI4900DY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 60V 5.3A 3.1W 58mohm @ 10V |
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Mfr.#: SI4900DY-T1-E3-CUT TAPE |
ブランドニューオリジナル |
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Mfr.#: SI4900DY OMO.#: OMO-SI4900DY-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4900DY-T1 OMO.#: OMO-SI4900DY-T1-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3-VISHAY |
MOSFET 2N-CH 60V 5.3A 8-SOIC |
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Mfr.#: SI4900DY-TI-E3 OMO.#: OMO-SI4900DY-TI-E3-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4900DYE3 OMO.#: OMO-SI4900DYE3-1190 |
Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |