IRG8P08N120KD-EPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-247AD-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

1200 V

Collector-Emitter Saturation Voltage:

1.7 V

Maximum Gate Emitter Voltage:

30 V

Continuous Collector Current at 25 C:

15 A

Pd - Power Dissipation:

89 W

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Tube

Continuous Collector Current Ic Max:

8 A

Brand:

Infineon / IR

Gate-Emitter Leakage Current:

100 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

25

Subcategory:

IGBTs

Part # Aliases:

SP001532714

Unit Weight:

0.229281 oz

Tags

IRG8P, IRG8, IRG