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SIR424DP-T1-GE3

SIR424DP-T1-GE3
Mfr. #:
SIR424DP-T1-GE3
メーカー:
Vishay
説明:
MOSFET N-CH 20V 30A PPAK SO-8
ライフサイクル:
メーカー新製品
データシート:
SIR424DP-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SIR424DP-T1-GE3 詳しくは
製品属性
属性値
メーカー
Vishay Siliconix
製品カテゴリ
FET-シングル
シリーズ
TrenchFETR
包装
Digi-ReelR代替パッケージ
パーツエイリアス
SIR424DP-GE3
単位重量
0.017870 oz
取り付けスタイル
SMD / SMT
パッケージ-ケース
PowerPAKR SO-8
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
1 Channel
サプライヤー-デバイス-パッケージ
PowerPAKR SO-8
構成
シングルクワッドドレイントリプルソース
FETタイプ
MOSFET Nチャネル、金属酸化物
パワーマックス
41.7W
トランジスタタイプ
1 N-Channel
Drain-to-Source-Voltage-Vdss
20V
入力-静電容量-Ciss-Vds
1250pF @ 10V
FET機能
標準
Current-Continuous-Drain-Id-25°C
30A (Tc)
Rds-On-Max-Id-Vgs
5.5 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
ゲートチャージ-Qg-Vgs
35nC @ 10V
Pd-電力損失
4.8 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
10 ns
立ち上がり時間
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
30 A
Vds-ドレイン-ソース-ブレークダウン-電圧
20 V
Vgs-th-Gate-Source-Threshold-Voltage
2.5 V
Rds-On-Drain-Source-Resistance
4.6 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
23 ns
典型的なターンオン遅延時間
18 ns
Qg-Gate-Charge
22 nC
フォワード-相互コンダクタンス-最小
80 S
チャネルモード
強化
Tags
SIR42, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIR424DP-T1-GE3 N-channel MOSFET Transistor; 23 A; 20 V; 8-Pin PowerPAK SO
***ure Electronics
SiR172DP Series N-Channel 20 V 0.0074 Ohm 41.7 W SMT Mosfet - PowerPAK® SO-8
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.0046Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:41.7W; No. Of Pins:8Pins Rohs Compliant: Yes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
モデル メーカー 説明 ストック 価格
SIR424DP-T1-GE3
DISTI # V72:2272_07432057		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R2810
  • 1000:$0.4094
  • 500:$0.4629
  • 250:$0.5056
  • 100:$0.5225
  • 25:$0.6391
  • 10:$0.6415
  • 1:$0.7429
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2073In Stock
  • 1000:$0.4589
  • 500:$0.5812
  • 100:$0.7495
  • 10:$0.9480
  • 1:$1.0700
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2073In Stock
  • 1000:$0.4589
  • 500:$0.5812
  • 100:$0.7495
  • 10:$0.9480
  • 1:$1.0700
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4158
SIR424DP-T1-GE3
DISTI # 27490183		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R3000
  • 3000:$0.4382
SIR424DP-T1-GE3
DISTI # 28976247		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R2810
  • 1000:$0.4094
  • 500:$0.4629
  • 250:$0.5056
  • 100:$0.5225
  • 25:$0.6391
  • 17:$0.6415
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R (Alt: SIR424DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.7809
  • 6000:€0.5599
  • 12000:€0.4539
  • 18000:€0.4009
  • 30000:€0.3839
SIR424DP-T1-GE3
DISTI # SIR424DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR424DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3929
  • 6000:$0.3809
  • 12000:$0.3649
  • 18000:$0.3549
  • 30000:$0.3459
SIR424DP-T1-GE3
DISTI # 70AC6481		Vishay IntertechnologiesTrans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 70AC6481)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.0700
  • 25:$0.9480
  • 50:$0.8490
  • 100:$0.7490
  • 250:$0.6650
  • 500:$0.5810
  • 1000:$0.4580
SIR424DP-T1-GE3
DISTI # 70AC6481		Vishay Intertechnologies 3000
  • 1:$1.0700
  • 25:$0.9480
  • 50:$0.8490
  • 100:$0.7490
  • 250:$0.6650
  • 500:$0.5810
  • 1000:$0.4580
SIR424DP-T1-GE3
DISTI # 15R4881		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET0
  • 1:$0.4500
  • 3000:$0.4500
SIR424DP-T1-GE3.
DISTI # 30AC0117		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$0.4500
  • 3000:$0.4500
SIR424DP-T1-GE3
DISTI # 70616563		Vishay SiliconixSIR424DP-T1-GE3 N-channel MOSFET Transistor,23 A,20 V,8-Pin PowerPAK SO
RoHS: Compliant		0
  • 300:$0.5100
  • 600:$0.5000
  • 1500:$0.4900
  • 3000:$0.4800
SIR424DP-T1-GE3
DISTI # 781-SIR424DP-GE3		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		3647
  • 1:$0.9500
  • 10:$0.7780
  • 100:$0.5970
  • 500:$0.5140
  • 1000:$0.4500
SIR424DP-T1-GE3
DISTI # 2646399		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 1:$1.5100
  • 10:$1.2300
  • 100:$0.9450
  • 500:$0.8140
  • 1000:$0.7120
  • 3000:$0.7120
SIR424DP-T1-GE3
DISTI # 2679709		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 3000:$0.5700
  • 6000:$0.5510
  • 9000:$0.5410
SIR424DP-T1-GE3
DISTI # 2646399		Vishay IntertechnologiesMOSFET, N-CH, 20V, 30A, POWERPAK SO
RoHS: Compliant		0
  • 5:£0.6120
  • 50:£0.5880
  • 100:£0.4340
  • 500:£0.3410
  • 1500:£0.3260
SIR424DP-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		Americas - 15000
    SIR424DP-T1-GE3
    DISTI # C1S803603788924    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		3000
    • 3000:$0.5020
    SIR424DP-T1-GE3
    DISTI # C1S803601945880    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		2810
    • 250:$0.5057
    • 100:$0.5227
    • 25:$0.6392
    • 10:$0.6417
    画像 モデル 説明
    SIR424DP-T1-GE3

    Mfr.#: SIR424DP-T1-GE3

    OMO.#: OMO-SIR424DP-T1-GE3

    		 MOSFET 20V Vds 20V Vgs PowerPAK SO-8
    SIR424DP-T1-E3

    Mfr.#: SIR424DP-T1-E3

    OMO.#: OMO-SIR424DP-T1-E3-1190

    		 ブランドニューオリジナル
    SIR424DP-T1-GE3

    Mfr.#: SIR424DP-T1-GE3

    OMO.#: OMO-SIR424DP-T1-GE3-VISHAY

    		 MOSFET N-CH 20V 30A PPAK SO-8
    可用性
    ストック:
    Available
    注文中:
    3000
    数量を入力してください:
    SIR424DP-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $0.51
    $0.51
    10
    $0.49
    $4.88
    100
    $0.46
    $46.20
    500
    $0.44
    $218.15
    1000
    $0.41
    $410.60
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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