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IRFHM830DTRPBF

IRFHM830DTRPBF
Mfr. #:
IRFHM830DTRPBF
メーカー:
Infineon Technologies
説明:
Darlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
ライフサイクル:
メーカー新製品
データシート:
IRFHM830DTRPBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
インターナショナルレクティファイアー
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
包装
リール
取り付けスタイル
SMD / SMT
パッケージ-ケース
PQFN-8
テクノロジー
Si
チャネル数
1 Channel
構成
シングルクワッドドレイントリプルソース
トランジスタタイプ
1 N-Channel
Pd-電力損失
2.8 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
6.7 ns
立ち上がり時間
20 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
20 A
Vds-ドレイン-ソース-ブレークダウン-電圧
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.8 V
Rds-On-Drain-Source-Resistance
5.7 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
9.1 ns
典型的なターンオン遅延時間
9.8 ns
Qg-Gate-Charge
13 nC
フォワード-相互コンダクタンス-最小
69 S
チャネルモード
強化
Tags
IRFHM830DT, IRFHM830D, IRFHM830, IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3
***ment14 APAC
MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ernational Rectifier
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 25V, 51A, 6 mOhm, 7 nC Qg, Low Rg, PQFN
***ment14 APAC
MOSFET, N CH, 25V, 51A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Power Dissipation Pd:26W; Voltage Vgs Max:20V
*** Electronics
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
***roFlash
Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
*** Source Electronics
Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Operated Drive; Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37
モデル メーカー 説明 ストック 価格
IRFHM830DTRPBF
DISTI # V72:2272_13891074		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
RoHS: Compliant		1703
  • 75000:$0.5489
  • 30000:$0.5491
  • 15000:$0.5499
  • 6000:$0.5558
  • 3000:$0.5616
  • 1000:$0.5633
  • 500:$0.5860
  • 250:$0.6596
  • 100:$0.7208
  • 50:$0.7680
  • 25:$0.8785
  • 10:$0.9017
  • 1:$1.0073
IRFHM830DTRPBF
DISTI # IRFHM830DTRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 20A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRFHM830DTRPBF
    DISTI # 26196361    		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
    RoHS: Compliant    		1703
    • 1000:$0.5633
    • 500:$0.5860
    • 250:$0.6596
    • 100:$0.7208
    • 50:$0.7680
    • 25:$0.8785
    • 14:$0.9017
    IRFHM830DTRPBF
    DISTI # 70019948    		Infineon Technologies AGMOSFET,30V,40A,4.3 MOHM,13 NC QG,1.1 OHM RG,MONOFETKY,PQFN 3.3X3.3
    RoHS: Compliant    		0
    • 4000:$1.5400
    • 8000:$1.5090
    • 20000:$1.4630
    • 40000:$1.4010
    • 100000:$1.3090
    IRFHM830DTRPBF
    DISTI # 942-IRFHM830DTRPBF    		Infineon Technologies AGMOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
    RoHS: Compliant    		0
      IRFHM830DTRPBFInternational Rectifier 576
      • 501:$1.0712
      • 232:$1.2010
      • 1:$2.5968
      IRFHM830DTRPBF
      DISTI # 1857345      		Infineon Technologies AGMOSFET,N CH,SCH DIODE,30V,20A,PQFN33
      RoHS: Compliant      		0
      • 1:$1.9100
      • 10:$1.6100
      • 100:$1.2500
      • 500:$1.1100
      • 1000:$0.9440
      IRFHM830DTRPBF
      DISTI # C1S322000595279      		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
      RoHS: Compliant      		1703
      • 100:$0.7208
      • 50:$0.7680
      • 25:$0.8785
      • 10:$0.9017
      画像 モデル 説明
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      Mfr.#: IRFHM8334TRPBF

      OMO.#: OMO-IRFHM8334TRPBF

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      IRFHM830TR2PBF

      Mfr.#: IRFHM830TR2PBF

      OMO.#: OMO-IRFHM830TR2PBF

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      IRFHM8334TRPBF

      Mfr.#: IRFHM8334TRPBF

      OMO.#: OMO-IRFHM8334TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 13A 8PQFN
      IRFHM830DTRPBF.

      Mfr.#: IRFHM830DTRPBF.

      OMO.#: OMO-IRFHM830DTRPBF--1190

      		 ブランドニューオリジナル
      IRFHM830TRPBF

      Mfr.#: IRFHM830TRPBF

      OMO.#: OMO-IRFHM830TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 21A PQFN
      IRFHM831TR2PBF

      Mfr.#: IRFHM831TR2PBF

      OMO.#: OMO-IRFHM831TR2PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 14A PQFN
      IRFHM8329TRPBF

      Mfr.#: IRFHM8329TRPBF

      OMO.#: OMO-IRFHM8329TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 16A PQFN
      IRFHM8330TRPBF

      Mfr.#: IRFHM8330TRPBF

      OMO.#: OMO-IRFHM8330TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 16A 8PQFN
      IRFHM8337TRPBF

      Mfr.#: IRFHM8337TRPBF

      OMO.#: OMO-IRFHM8337TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 12A 8PQFN
      可用性
      ストック:
      Available
      注文中:
      2500
      数量を入力してください:
      IRFHM830DTRPBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格（USD）
      量
      単価
      小計金額
      1
      $0.65
      $0.65
      10
      $0.62
      $6.22
      100
      $0.59
      $58.91
      500
      $0.56
      $278.20
      1000
      $0.52
      $523.70
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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