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STP180N55F3

STP180N55F3
Mfr. #:
STP180N55F3
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 600V 6A Hyper fast IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
STP180N55F3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STP180N55F3 DatasheetSTP180N55F3 Datasheet (P4-P6)STP180N55F3 Datasheet (P7-P9)STP180N55F3 Datasheet (P10-P12)STP180N55F3 Datasheet (P13-P14)
ECAD Model:
More Information:
STP180N55F3 more Information STP180N55F3 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
120 A
Rds On - Drain-Source Resistance:
3.8 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
330 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
9.15 mm
Length:
10.4 mm
Series:
STB180N55F3
Transistor Type:
1 N-Channel
Width:
4.6 mm
Brand:
STMicroelectronics
Fall Time:
50 ns
Product Type:
MOSFET
Rise Time:
150 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
110 ns
Typical Turn-On Delay Time:
25 ns
Unit Weight:
0.011640 oz
Tags
STP180N, STP180, STP18, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 55V 120A 3-Pin(3+Tab) TO-220 Tube
***icroelectronics
N-channel 55V - 2.9mOhm - 120A - D2PAK/TO-220
***r Electronics
Power Field-Effect Transistor, 120A I(D), 55V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 55V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 330W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 55V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Part # Mfg. Description Stock Price
STP180N55F3
DISTI # 497-7512-5-ND		STMicroelectronicsMOSFET N-CH 55V 120A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    STP180N55F3
    DISTI # 511-STP180N55F3    		STMicroelectronicsMOSFET N Ch 600V 6A Hyper fast IGBT
    RoHS: Compliant    		0
      STP180N55F3STMicroelectronics 55
        STP180N55F3STMicroelectronics 150
        • 2:$4.0320
        • 8:$2.6208
        • 21:$2.0160
        • 64:$1.8817
        • 134:$1.7471
        STP180N55F3STMicroelectronics120 A, 55 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB120
        • 75:$2.5200
        • 8:$2.7000
        • 1:$5.4000
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        Availability
        Stock:
        Available
        On Order:
        5000
        Enter Quantity:
        Current price of STP180N55F3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
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