EMY1T2R

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Transistor Polarity:

NPN, PNP

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

50 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

7 V

Maximum DC Collector Current:

0.15 A

Gain Bandwidth Product fT:

140 MHz, 180 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

EMY1

DC Current Gain hFE Max:

120 at 1 mA, 6 V

Height:

0.5 mm

Length:

1.6 mm

Packaging:

Reel

Width:

1.2 mm

Brand:

ROHM Semiconductor

DC Collector/Base Gain hfe Min:

120

Pd - Power Dissipation:

150 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

8000

Subcategory:

Transistors

Part # Aliases:

EMY1

Tags

EMY1T, EMY1, EMY