GS66506T-E01-MR

GS66506T-E01-MR
Mfr. #:
GS66506T-E01-MR
メーカー:
GaN Systems
説明:
MOSFET 650V 22A E-Mode GaN
ライフサイクル:
メーカー新製品
データシート:
GS66506T-E01-MR データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
GS66506T-E01-MR 詳しくは
製品属性
属性値
メーカー
GaNシステム
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
包装
リール
取り付けスタイル
SMD / SMT
テクノロジー
GaN
Vgs-Gate-Source-Voltage
10 V
Vds-ドレイン-ソース-ブレークダウン-電圧
650 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Resistance
73 mOhms
トランジスタ-極性
Nチャネル
Qg-Gate-Charge
4.9 nC
チャネルモード
強化
Tags
GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
モデル メーカー 説明 ストック 価格
GS66506T-E01-MR
DISTI # 499-GS66506T-E01-MR
GaN SystemsMOSFET 650V 22A E-Mode GaN
RoHS: Compliant
0
  • 1:$17.1700
  • 10:$13.8500
  • 25:$13.2000
  • 250:$12.2700
GS66506T-E01-MR
DISTI # GS66506T-E01-MR
GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant
0
  • 250:$11.7800
画像 モデル 説明
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR

MOSFET 650V 22A E-Mode GaN
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR-1190

MOSFET 650V 22A E-Mode GaN
可用性
ストック:
Available
注文中:
3500
数量を入力してください:
GS66506T-E01-MRの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$17.67
$17.67
10
$16.79
$167.86
100
$15.90
$1 590.30
500
$15.02
$7 509.75
1000
$14.14
$14 136.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
皮切りに
最新の製品
  • CU Series Power Entry Modules
    TE Connectivity offers 1U height filtered and unfiltered power entry modules for rack mount equipment.
  • URG Series
    Susumu's URG thin film chip resistors offer increased levels of reliability and stability compared to competitor's similar components.
  • NT Series PTFE Trimmers
    Knowles Voltronics NT series of PTFE trimmers are designed for applications requiring greater capacitance and voltage ratings than the popular smaller trimmers.
  • Compare GS66506T-E01-MR
    GS66502BE01MR vs GS66504E01MR vs GS66504BE01
  • IH Series IEC Inlet RFI Filters
    TE Connectivity's Corcom IEC inlet RFI filter IH series enables manufacturers to comply with the IEC 60601-1 Standard Class II requirements by providing 2x MOPP construction (two means of pati
  • FB Series Power Line Filters
    TE Connectivity's FB power line filters have an ambient temperature of 50°C, have strong differential mode performance, and are compact in size.
Top