2SK3271-01

Mfr. #:: 2SK3271-01
メーカー:: Fuji Electric Co Ltd
説明:: MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 5 Milliohms, ID +/-100A, TO-3P, PD 155W, VGS +/-
ライフサイクル:: メーカー新製品
データシート:: 2SK3271-01 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: 2SK327, 2SK32, 2SK3, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK3271-01 説明

***(Formerly Allied Electronics): Power MOSFET,N-Ch,VDSS 60V,RDS(ON) 5 Milliohms,ID+/-100A,TO-3P,PD 155W,VGS+/-30V

***ical: Trans MOSFET N-CH Si 60V 100A Automotive 3-Pin(3+Tab) TO-3P

***ource: N-channel MOS-FET

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V

***ure Electronics: Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***(Formerly Allied Electronics): IRF840APBF N-channel MOSFET Transistor; 8 A; 500 V; 3-Pin TO-220AB

***th Star Micro: Transistor MOSFET N-CH 500V 8A 3-Pin (3+Tab) TO-220AB

***ure Electronics: N-Channel 500 V 0.85 O 38 nC Flange Mount Power Mosfet - TO-220-3

***enic: 500V 8A 850m´Î@10V4.8A 125W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 500V, 8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ure Electronics: Single N-Channel 650 V 0.93 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 650V 8.5A 3-Pin(3+Tab) TO-220AB

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 167 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.93ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 167W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 8.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 21A; Voltage Vds Typ: 650V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

***(Formerly Allied Electronics): IRFB11N50APBF N-channel MOSFET Transistor; 11 A; 500 V; 3-Pin TO-220AB

***ure Electronics: Single N-Channel 500 V 0.52 Ohms Flange Mount Power Mosfet - TO-220-3

*** Source Electronics: Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 500V 11A TO-220AB

***ment14 APAC: MOSFET, N, 500V, 11A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:500V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V

***ure Electronics: Single N-Channel 100 V 25 mOhm 114 nC HEXFET® Power Mosfet - TO-220-3

***eco: IRFB59N10DPBF,MOSFET, 100V, 59 A, 25 MOHM, 76 NC QG, TO-220A

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***el Electronic: Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***ure Electronics: Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***(Formerly Allied Electronics): MOSFET, 150V, 23A, 90 mOhm, 37 nC Qg, TO-220AB

***Yang: Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:150V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23A; Package / Case:TO-220AB; Power Dissipation Pd:136W; Power Dissipation Pd:136W; Pulse Current Idm:92A; Voltage Vds Typ:150V; Voltage Vgs th Max:5.5V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Market price

モデル	メーカー	説明	ストック	価格
2SK3271-01 DISTI # 70212521	Fuji Electric Co Ltd	MOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 5 Milliohms,ID +/-100A,TO-3P,PD 155W,VGS +/- RoHS: Compliant	0	500:$4.1200
2SK3271-01 DISTI # FE0000000000296	Fuji Electric Co Ltd	100A,60V,0.0065ohm,N-CHANNEL,Si,POWER,MOSFET,TO-247 RoHS: Compliant	0 in Stock0 on Order

画像	モデル	説明
	Mfr.#: 2SK3200 OMO.#: OMO-2SK3200-1190	ブランドニューオリジナル
	Mfr.#: 2SK3217 OMO.#: OMO-2SK3217-1190	ブランドニューオリジナル
	Mfr.#: 2SK3225Z OMO.#: OMO-2SK3225Z-1190	ブランドニューオリジナル
	Mfr.#: 2SK323 OMO.#: OMO-2SK323-1190	ブランドニューオリジナル
	Mfr.#: 2SK3230C-T1 OMO.#: OMO-2SK3230C-T1-1190	ブランドニューオリジナル
	Mfr.#: 2SK3234 OMO.#: OMO-2SK3234-1190	ブランドニューオリジナル
	Mfr.#: 2SK3271-01 OMO.#: OMO-2SK3271-01-1190	MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 5 Milliohms, ID +/-100A, TO-3P, PD 155W, VGS +/-
	Mfr.#: 2SK3277 OMO.#: OMO-2SK3277-1190	ブランドニューオリジナル
	Mfr.#: 2SK3291-TD-E OMO.#: OMO-2SK3291-TD-E-1190	- Bulk (Alt: 2SK3291-TD-E)
	Mfr.#: 2SK3294-ZJ OMO.#: OMO-2SK3294-ZJ-1190	ブランドニューオリジナル

2SK3271-01

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes