BSS123NH6327XT

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

190 mA

Rds On - Drain-Source Resistance:

2.4 Ohms

Vgs th - Gate-Source Threshold Voltage:

800 mV

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

900 pC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Height:

1.1 mm

Length:

2.9 mm

Transistor Type:

1 N-Channel

Width:

1.3 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

410 mS

Fall Time:

22 ns

Product Type:

MOSFET

Rise Time:

3.2 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

7.4 ns

Typical Turn-On Delay Time:

2.3 ns

Part # Aliases:

BSS123N BSS123NH6327XTSA1 H6327 SP000870646

Unit Weight:

0.000282 oz

Tags

BSS123NH6327X, BSS123NH63, BSS123NH, BSS123N, BSS123, BSS12, BSS1, BSS