IPD80N04S3-06

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

80 A

Rds On - Drain-Source Resistance:

6 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

100 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

OptiMOS

Packaging:

Reel

Height:

2.3 mm

Length:

6.5 mm

Series:

OptiMOS-T

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

Infineon Technologies

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

20 ns

Typical Turn-On Delay Time:

15 ns

Part # Aliases:

IPD80N04S306ATMA1 IPD8N4S36XT SP000261220

Unit Weight:

0.139332 oz

Tags

IPD80N04S3-0, IPD80N04, IPD80N, IPD80, IPD8, IPD