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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| IPB051NE8NGATMA1 DISTI # IPB051NE8NGATMA1 | Infineon Technologies AG | - Bulk (Alt: IPB051NE8NGATMA1) Min Qty: 205 Container: Bulk | Americas - 0 |
|
| IPB051NE8NGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 33000 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: IPB051NE8NG OMO.#: OMO-IPB051NE8NG-1190 |
Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IPB051NE8NG(051NE8N) |
New and Original |
|
|
Mfr.#: IPB051NE8NGATMA1 OMO.#: OMO-IPB051NE8NGATMA1-1190 |
- Bulk (Alt: IPB051NE8NGATMA1) |
