MTB3N60E

MTB3N60E
Mfr. #:
MTB3N60E
Manufacturer:
Rochester Electronics, LLC
Description:
Power Field-Effect Transistor, 3A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lifecycle:
New from this manufacturer.
Datasheet:
MTB3N60E Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
MTB3N6, MTB3N, MTB3, MTB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
MTB3N60EON SemiconductorPower Field-Effect Transistor, 3A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant
550
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
MTB3N60ET4ON SemiconductorPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Not Compliant
700
  • 1000:$0.8600
  • 500:$0.9000
  • 100:$0.9400
  • 25:$0.9800
  • 1:$1.0500
Image Part # Description
MTB301MS

Mfr.#: MTB301MS

OMO.#: OMO-MTB301MS-1190

New and Original
MTB30N06V

Mfr.#: MTB30N06V

OMO.#: OMO-MTB30N06V-1190

New and Original
MTB30N06VLT4

Mfr.#: MTB30N06VLT4

OMO.#: OMO-MTB30N06VLT4-1190

POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 60V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
MTB30P06V

Mfr.#: MTB30P06V

OMO.#: OMO-MTB30P06V-1190

Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MTB33N10ET4

Mfr.#: MTB33N10ET4

OMO.#: OMO-MTB33N10ET4-1190

33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB33N10ET4G

Mfr.#: MTB33N10ET4G

OMO.#: OMO-MTB33N10ET4G-1190

New and Original
MTB36N06

Mfr.#: MTB36N06

OMO.#: OMO-MTB36N06-1190

New and Original
MTB3D0N03BE3

Mfr.#: MTB3D0N03BE3

OMO.#: OMO-MTB3D0N03BE3-1190

New and Original
MTB3N100E T3N100E

Mfr.#: MTB3N100E T3N100E

OMO.#: OMO-MTB3N100E-T3N100E-1190

New and Original
MTB3N60ET4

Mfr.#: MTB3N60ET4

OMO.#: OMO-MTB3N60ET4-1190

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Availability
Stock:
Available
On Order:
1000
Enter Quantity:
Current price of MTB3N60E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.70
$0.70
10
$0.67
$6.70
100
$0.63
$63.45
500
$0.60
$299.65
1000
$0.56
$564.00
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