OMO ElectronicOMO Electronic
Expand menu
0 Cart

IPB530N15N3 G

IPB530N15N3 G
Mfr. #:
IPB530N15N3 G
Manufacturer:
Infineon Technologies
Description:
Darlington Transistors MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPB530N15N3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB530N15N3 G more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Series
OptiMOS 3
Packaging
Reel
Part-Aliases
IPB530N15N3GATMA1 IPB530N15N3GXT SP000521718
Unit-Weight
0.056438 oz
Mounting-Style
SMD/SMT
Tradename
OptiMOS
Package-Case
TO-263-7
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
68 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
3 ns
Rise-Time
9 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
21 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Rds-On-Drain-Source-Resistance
53 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
13 ns
Typical-Turn-On-Delay-Time
9 ns
Tags
IPB53, IPB5, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB530N15N3GATMA1
DISTI # V72:2272_06384234		Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.7456
  • 500:$0.8391
  • 250:$0.9170
  • 100:$0.9770
  • 25:$1.1177
  • 10:$1.1472
  • 1:$1.2814
IPB530N15N3GATMA1
DISTI # IPB530N15N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 150V 21A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPB530N15N3GATMA1
    DISTI # IPB530N15N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 150V 21A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPB530N15N3GATMA1
      DISTI # IPB530N15N3GATMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 150V 21A TO263-3
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 1000:$0.7966
      IPB530N15N3GATMA1
      DISTI # 27067726      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		2000
      • 1000:$0.6854
      IPB530N15N3GATMA1
      DISTI # 30321591      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		1000
      • 1000:$0.7456
      • 500:$0.8391
      • 250:$0.9170
      • 100:$0.9770
      • 25:$1.1177
      • 11:$1.1472
      IPB530N15N3GATMA1
      DISTI # SP000521718      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263 (Alt: SP000521718)
      RoHS: Compliant
      Min Qty: 1000      		Europe - 2000
      • 1000:€1.0359
      • 2000:€0.8079
      • 4000:€0.7219
      • 6000:€0.6569
      • 10000:€0.6159
      IPB530N15N3GATMA1
      DISTI # IPB530N15N3GATMA1      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB530N15N3GATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 1000:$0.6949
      • 2000:$0.6699
      • 4000:$0.6459
      • 6000:$0.6239
      • 10000:$0.6129
      IPB530N15N3GATMA1
      DISTI # 34AC1658      		Infineon Technologies AGMOSFET, N-CH, 150V, 21A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes955
      • 1:$1.6400
      • 10:$1.4100
      • 25:$1.2700
      • 50:$1.1500
      • 100:$0.9680
      • 250:$0.8560
      • 500:$0.7440
      • 1000:$0.7140
      IPB530N15N3 G
      DISTI # 726-IPB530N15N3G      		Infineon Technologies AGMOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
      RoHS: Compliant      		1862
      • 1:$1.5900
      • 10:$1.3600
      • 100:$1.0400
      • 500:$0.9180
      • 1000:$0.7250
      IPB530N15N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		64
      • 1000:$0.5700
      • 500:$0.6000
      • 100:$0.6200
      • 25:$0.6500
      • 1:$0.7000
      IPB530N15N3GATMA1
      DISTI # C1S322000615333      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		1000
      • 250:$0.9170
      • 100:$0.9770
      • 25:$1.1177
      • 10:$1.1472
      IPB530N15N3GATMA1
      DISTI # C1S322000525331      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		2000
      • 2000:$0.7200
      • 1000:$0.7760
      IPB530N15N3GATMA1
      DISTI # XSKDRABS0006506      		Infineon Technologies AG 
      RoHS: Compliant      		1440
      • 1000:$1.0700
      • 1440:$0.9947
      IPB530N15N3GATMA1
      DISTI # 2781071      		Infineon Technologies AGMOSFET, N-CH, 150V, 21A, TO-263
      RoHS: Compliant      		1035
      • 5:£0.7870
      • 25:£0.7710
      • 100:£0.7560
      IPB530N15N3GATMA1
      DISTI # 2781071      		Infineon Technologies AGMOSFET, N-CH, 150V, 21A, TO-263
      RoHS: Compliant      		955
      • 5:$2.2800
      • 25:$1.9800
      • 100:$1.6200
      Image Part # Description
      IPB530N15N3 G

      Mfr.#: IPB530N15N3 G

      OMO.#: OMO-IPB530N15N3-G

      		 MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
      IPB530N15N3GATMA1

      Mfr.#: IPB530N15N3GATMA1

      OMO.#: OMO-IPB530N15N3GATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 150V 21A TO263-3
      IPB530N15N3G

      Mfr.#: IPB530N15N3G

      OMO.#: OMO-IPB530N15N3G-1190

      		 New and Original
      IPB530N15N3 G

      Mfr.#: IPB530N15N3 G

      OMO.#: OMO-IPB530N15N3-G-124

      		 Darlington Transistors MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
      Availability
      Stock:
      Available
      On Order:
      5000
      Enter Quantity:
      Current price of IPB530N15N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.09
      $1.09
      10
      $1.03
      $10.33
      100
      $0.98
      $97.88
      500
      $0.92
      $462.20
      1000
      $0.87
      $870.00
      Start with
      Newest Products
      • M-SERIES D-Sub Connectors
        M-SERIES D-Sub Connectors
        The M-SERIES D-Sub connectors offer high reliability performance for the most challenging design applications.
      • TLV493D-A1B6 3D Magnetic Sensor
        TLV493D-A1B6 3D Magnetic Sensor
        Infineon's combination of 3-axis measurement in a small package, with low power consumption, provides the TLV493D-A1B6 contactless position sensing.
      • IR25750 Current Sensing IC
        IR25750 Current Sensing IC
        IR25750’s gate-drive input provides the VCC supply voltage to the IC and synchronizes the RDS(ON) or VCE(ON) sensing circuit.
      • 600 V Trench Ultra-Fast IGBTs
        600 V Trench Ultra-Fast IGBTs
        International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
      • Compare IPB530N15N3 G
        Compare IPB530N15N3 G
        IPB50CN10N vs IPB50CN10NG vs IPB50CN10NGATMA1
      • DPS310 Digital Barometric Pressure Sensors
        DPS310 Digital Barometric Pressure Sensors
        Infineon's DPS310XTSA1 is a miniaturized digital barometric air pressure sensor with high accuracy, high stability, and low current consumption.
      More Newest Products
      Top