QS8F2TCR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSMT-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel, PNP

Vds - Drain-Source Breakdown Voltage:

12 V

Id - Continuous Drain Current:

2.5 A

Rds On - Drain-Source Resistance:

44 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

13 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.5 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

QS8F2

Transistor Type:

1 P-Channel, PNP

Brand:

ROHM Semiconductor

Fall Time:

85 ns

Product Type:

MOSFET

Rise Time:

35 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

130 ns

Typical Turn-On Delay Time:

9 ns

Tags

QS8F, QS8