SIHF540S-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

28 A

Rds On - Drain-Source Resistance:

77 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

72 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

150 W

Configuration:

Single

Channel Mode:

Enhancement

Height:

4.83 mm

Length:

10.67 mm

Series:

SIHF

Transistor Type:

1 N-Channel

Width:

9.65 mm

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

8.7 S

Fall Time:

43 ns

Product Type:

MOSFET

Rise Time:

44 ns

Factory Pack Quantity:

1

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

53 ns

Typical Turn-On Delay Time:

11 ns

Tags

SIHF54, SIHF5, SIHF, SIH