IXFR64N60P

Mfr. #:: IXFR64N60P
メーカー:: Littelfuse
説明:: Darlington Transistors MOSFET DIODE Id36 BVdass600
ライフサイクル:: メーカー新製品
データシート:: IXFR64N60P データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: IXFR64N60P 詳しくは

製品属性
属性値

メーカー: IXYS

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: IXFR64N60

包装: チューブ

単位重量: 0.186952 oz

取り付けスタイル: SMD / SMT

商標名: HyperFET

パッケージ-ケース: TO-247-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 360 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 24 ns

立ち上がり時間: 23 ns

Vgs-Gate-Source-Voltage: 30 V

Id-連続-ドレイン-電流: 36 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 600 V

Rds-On-Drain-Source-Resistance: 105 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 79 ns

典型的なターンオン遅延時間: 28 ns

フォワード-相互コンダクタンス-最小: 63 S

チャネルモード: 強化

Tags: IXFR64, IXFR6, IXFR, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFR64N60P 説明

***ure Electronics: N-Channel 600 V 36 A 105 mO PolarHT HiPerFET Power Mosfet - ISOPLUS-247

***ical: Trans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247

***nell: MOSFET, N, ISOPLUS247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:36A; Resistance, Rds On:0.105ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOPLUS-247; Termination Type:Through Hole; N-channel Gate Charge:200nC; Power, Pd:360W; Typ Capacitance Ciss:12000pF; Voltage, Isolation:2500V; Voltage, Vds Max:600V; Rth:0.35; Time, trr Max:200ns

IXFR64N60P 詳しくは

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs: IXYS Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Market price

モデル	メーカー	説明	ストック	価格
IXFR64N60P DISTI # V36:1790_15878443	IXYS Corporation	Trans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247 RoHS: Compliant	20	1000:$8.1290 500:$8.8510 250:$9.6860 100:$10.5040 50:$10.8300 25:$11.7040 10:$12.5840 1:$13.7130
IXFR64N60P DISTI # IXFR64N60P-ND	IXYS Corporation	MOSFET N-CH 600V 36A ISOPLUS247 RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$12.7797
IXFR64N60P DISTI # 30696577	IXYS Corporation	Trans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247 RoHS: Compliant	20	10:$12.5840 1:$13.7130
IXFR64N60P DISTI # 747-IXFR64N60P	IXYS Corporation	MOSFET DIODE Id36 BVdass600 RoHS: Compliant	145	1:$15.8900 10:$14.4400 25:$13.3600 50:$12.2900 100:$11.9900 250:$10.9900 500:$9.9700
IXFR64N60P DISTI # C1S331700009007	IXYS Corporation	Trans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247 RoHS: Compliant	20	50:$10.8300

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