IXTQ102N15T

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3P-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

150 V

Id - Continuous Drain Current:

102 A

Rds On - Drain-Source Resistance:

18 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

455 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Bulk

Length:

15.8 mm

Transistor Type:

1 N-Channel

Width:

4.9 mm

Brand:

IXYS

Fall Time:

22 ns

Product Type:

MOSFET

Rise Time:

14 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

25 ns

Typical Turn-On Delay Time:

20 ns

Unit Weight:

0.194007 oz

Tags

IXTQ102, IXTQ10, IXTQ1, IXTQ, IXT