DMN1003UCA6-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

X3-DSN3518-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

12 V

Id - Continuous Drain Current:

23.6 A

Rds On - Drain-Source Resistance:

2.3 mOhms, 2.3 mOhms

Vgs th - Gate-Source Threshold Voltage:

500 mV

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

56.5 nC, 56.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.67 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

2 N-Channel

Brand:

Diodes Incorporated

Fall Time:

6208 ns, 6208 ns

Product Type:

MOSFET

Rise Time:

1694 ns, 1694 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

47479 ns, 4747 ns

Typical Turn-On Delay Time:

603 ns, 603 ns

Tags

DMN100, DMN10, DMN1, DMN