IPB090N06N3 G

Mfr. #:: IPB090N06N3 G
Manufacturer:: Infineon Technologies
Description:: IPB090N06N3 G
Lifecycle:: New from this manufacturer.
Datasheet:: IPB090N06N3 G Datasheet
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Tags: IPB090, IPB09, IPB0, IPB

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We provide 90-360 days warranty.

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IPB090N06N3 G More Information

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB090N06N3GATMA1 DISTI # V72:2272_06384657	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	473	250:$0.7398 100:$0.7473 25:$0.9646 10:$1.0716 1:$1.2131
IPB090N06N3GATMA1 DISTI # V36:1790_06384657	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.3640 500000:$0.3644 100000:$0.4040 10000:$0.4793 1000:$0.4922
IPB090N06N3GATMA1 DISTI # IPB090N06N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	860In Stock	500:$0.6422 100:$0.7773 10:$0.9970 1:$1.1200
IPB090N06N3GATMA1 DISTI # IPB090N06N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	860In Stock	500:$0.6422 100:$0.7773 10:$0.9970 1:$1.1200
IPB090N06N3GATMA1 DISTI # IPB090N06N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.4200 5000:$0.4364 2000:$0.4594 1000:$0.4922
IPB090N06N3 G DISTI # 30605633	Infineon Technologies AG	IPB090N06N3 G RoHS: Compliant	480	49:$0.5112
IPB090N06N3GATMA1 DISTI # 27089772	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	473	21:$1.2131
IPB090N06N3GATMA1 DISTI # SP000398042	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398042) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 22800	10000:€0.3159 6000:€0.3409 4000:€0.3689 2000:€0.4029 1000:€0.4919
IPB090N06N3 G DISTI # IPB090N06N3G	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB090N06N3G) RoHS: Not Compliant Min Qty: 807 Container: Bulk	Americas - 0	8070:$0.3929 4035:$0.4009 2421:$0.4139 1614:$0.4299 807:$0.4459
IPB090N06N3GXT DISTI # IPB090N06N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB090N06N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.3169 6000:$0.3229 4000:$0.3339 2000:$0.3469 1000:$0.3599
IPB090N06N3 G DISTI # 726-IPB090N06N3G	Infineon Technologies AG	MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant	1019	1:$1.0200 10:$0.8750 100:$0.6720 500:$0.5940 1000:$0.4690 2000:$0.4160 10000:$0.4010
IPB090N06N3G	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	450	1000:$0.4100 500:$0.4300 100:$0.4500 25:$0.4700 1:$0.5000
IPB090N06N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	2000	1000:$0.3200 500:$0.3300 100:$0.3500 25:$0.3600 1:$0.3900
IPB090N06N3GATMA1 DISTI # 8269529P	Infineon Technologies AG	MOSFET N-CH 50A 60V OPTIMOS3 TO263, RL	775	1000:£0.3370 500:£0.4250 250:£0.4810 50:£0.5540
IPB090N06N3GATMA1 DISTI # IPB090N06N3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,50A,71W,PG-TO263-3	41	1000:$0.4257 100:$0.4572 10:$0.5270 3:$0.6553 1:$0.7615
IPB090N06N3GATMA1 DISTI # 1775550	Infineon Technologies AG	MOSFET, N CH, 50A, 60V, PG-TO263-3	1790	500:£0.4680 250:£0.5360 100:£0.6030 25:£0.7630 5:£0.9400

Related products

Image	Part #	Description
	Mfr.#: IPB090N06N3 G OMO.#: OMO-IPB090N06N3-G	MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
	Mfr.#: IPB090N06N3GATMA1 OMO.#: OMO-IPB090N06N3GATMA1	MOSFET MV POWER MOS
	Mfr.#: IPB090N06N3 G OMO.#: OMO-IPB090N06N3-G-1190	IPB090N06N3 G
	Mfr.#: IPB090N06N3G OMO.#: OMO-IPB090N06N3G-1190	Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: IPB090N06N3GATMA1 OMO.#: OMO-IPB090N06N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 50A TO263-3
	Mfr.#: IPB090N06N3GATMA1 , 2SD1 OMO.#: OMO-IPB090N06N3GATMA1-2SD1-1190	New and Original
	Mfr.#: IPB090N06N3GS OMO.#: OMO-IPB090N06N3GS-1190	New and Original

Availability

Stock:: Available
On Order:: 2000
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Current price of IPB090N06N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

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1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

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IPB090N06N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes