SIR770DP-T1-GE3

Mfr. #:: SIR770DP-T1-GE3
メーカー:: Vishay
説明:: MOSFET 2N-CH 30V 8A PPAK SO-8
ライフサイクル:: メーカー新製品
データシート:: SIR770DP-T1-GE3 データシート
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詳しくは:: SIR770DP-T1-GE3 詳しくは

製品属性
属性値

メーカー: VISHAY

製品カテゴリ: FET-アレイ

シリーズ: TrenchFETR

包装: テープ＆リール（TR）

パーツエイリアス: SIR770DP-GE3

単位重量: 0.017870 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: PowerPAKR SO-8 Dual

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR SO-8 Dual

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 17.8W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 900pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 8A

Rds-On-Max-Id-Vgs: 21 mOhm @ 8A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

ゲートチャージ-Qg-Vgs: 21nC @ 10V

Pd-電力損失: 17.8 W

最高作動温度: + 150 C

最低作動温度: - 55 C

Vgs-Gate-Source-Voltage: +/- 20 V

Id-連続-ドレイン-電流: 8 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.2 V to 2.8 V

Rds-On-Drain-Source-Resistance: 17.5 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 14 nC

フォワード-相互コンダクタンス-最小: 31 S

Tags: SIR770D, SIR770, SIR77, SIR7, SIR

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR770DP-T1-GE3 説明

***ure Electronics: SiR770DP Series 30 V 0.021 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8

***et: Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R

***ment14 APAC: MOSFET,NN CH,SC DIO,30V,8A,PPAKS08; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):17500µohm; Power Dissipation Pd:3.6W

SIR770DP-T1-GE3 詳しくは

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

モデル	メーカー	説明	ストック	価格
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.5236
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R (Alt: SIR770DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€1.0309 10:€0.7389 25:€0.5999 50:€0.5299 100:€0.5219 500:€0.5139 1000:€0.5069
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR770DP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SIR770DP-T1-GE3 DISTI # 781-SIR770DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	0	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5670
SIR770DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas -

画像	モデル	説明
	Mfr.#: SIR770DP-T1-GE3 OMO.#: OMO-SIR770DP-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SIR770DP OMO.#: OMO-SIR770DP-1190	ブランドニューオリジナル
	Mfr.#: SIR770DP-T1-E3 OMO.#: OMO-SIR770DP-T1-E3-1190	ブランドニューオリジナル
	Mfr.#: SIR770DP-T1-GE3 OMO.#: OMO-SIR770DP-T1-GE3-VISHAY	MOSFET 2N-CH 30V 8A PPAK SO-8

SIR770DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes