SI2333DDS-T1-GE3

Mfr. #:: SI2333DDS-T1-GE3
メーカー:: Vishay
説明:: MOSFET P-CH 12V 6A SOT23
ライフサイクル:: メーカー新製品
データシート:: SI2333DDS-T1-GE3 データシート
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詳しくは:: SI2333DDS-T1-GE3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: ICチップ

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

単位重量: 0.050717 oz

取り付けスタイル: SMD / SMT

商標名: PチャネルGenIII

パッケージ-ケース: TO-236-3, SC-59, SOT-23-3

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: SOT-23-3 (TO-236)

構成: 独身

FETタイプ: MOSFET Pチャネル、金属酸化物

パワーマックス: 1.7W

トランジスタタイプ: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 12V

入力-静電容量-Ciss-Vds: 1275pF @ 6V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 6A (Tc)

Rds-On-Max-Id-Vgs: 28 mOhm @ 5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

ゲートチャージ-Qg-Vgs: 35nC @ 8V

Pd-電力損失: 1.7 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 20 ns

立ち上がり時間: 24 ns

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: - 6 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 12 V

Rds-On-Drain-Source-Resistance: 28 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 26 ns

典型的なターンオン遅延時間: 45 ns

Qg-Gate-Charge: 9 nC

フォワード-相互コンダクタンス-最小: 18 S

Tags: SI2333DDS-T, SI2333DD, SI2333D, SI2333, SI233, SI23, SI2

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2333DDS-T1-GE3 説明

***ied Electronics & Automation: SI2333DDS-T1-GE3 P-channel MOSFET Transistor; 6 A; 12 V; 3-Pin SOT-23

***Components: On a Reel of 3000, P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Vishay SI2333DDS-T1-GE3

***ure Electronics: Single P-Channel 12 V 0.028 O 35 nC Surface Mount Power Mosfet - SOT-23

***et Europe: Trans MOSFET P-CH 12V 5A 3-Pin TO-236 T/R

***i-Key: MOSFET P-CH 12V 6A SOT23

***ponent Sense: TR MOS P 28MR 4.5V -6A SOT23 SMD R-TRANS

***ical: Trans MOSFET P-CH 12V 5A

***et: P-CHANNEL 12-V (D-S) MOSFET

***ronik: P-CH 12V 6A 28mOhm SOT23

***ment14 APAC: MOSFET, P-CH, 12V, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:1.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C

SI2333DDS-T1-GE3 詳しくは

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

モデル	メーカー	説明	ストック	価格
SI2333DDS-T1-GE3 DISTI # SI2333DDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 6A SOT23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1543
SI2333DDS-T1-GE3 DISTI # SI2333DDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 6A SOT23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1743 500:$0.2256 100:$0.3076 10:$0.4100 1:$0.4900
SI2333DDS-T1-GE3 DISTI # SI2333DDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 6A SOT23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1743 500:$0.2256 100:$0.3076 10:$0.4100 1:$0.4900
SI2333DDS-T1-GE3 DISTI # SI2333DDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 5A 3-Pin TO-236 T/R (Alt: SI2333DDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$1.7300 6000:$1.1931 9000:$0.8872 15000:$0.7208 30000:$0.6528 75000:$0.6291 150000:$0.6070
SI2333DDS-T1-GE3 DISTI # SI2333DDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2333DDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1309 6000:$0.1269 12000:$0.1219 18000:$0.1189 30000:$0.1159
SI2333DDS-T1-GE3 DISTI # 05AC7746	Vishay Intertechnologies	Trans MOSFET P-CH 12V 5A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 05AC7746) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.5160 25:$0.3920 50:$0.3420 100:$0.2920 250:$0.2660 500:$0.2400 1000:$0.1850
SI2333DDS-T1-GE3 DISTI # 05AC7746	Vishay Intertechnologies	MOSFET, P-CH, -12V, -6A, SOT-23-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-6A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:1V,MSL:- , RoHS Compliant: Yes	75	1:$0.5160 25:$0.3920 50:$0.3420 100:$0.2920 250:$0.2660 500:$0.2400 1000:$0.1850
SI2333DDS-T1-GE3 DISTI # 67X6847	Vishay Intertechnologies	P-CHANNEL 12-V (D-S) MOSFET	0	1:$0.1330 3000:$0.1320 6000:$0.1250
SI2333DDS-T1-GE3 DISTI # 70459509	Vishay Siliconix	SI2333DDS-T1-GE3 P-channel MOSFET Transistor,6 A,12 V,3-Pin SOT-23 RoHS: Compliant	0	3000:$0.2360 6000:$0.2030 12000:$0.1870
SI2333DDS-T1-GE3 DISTI # 78-SI2333DDS-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs SOT-23 RoHS: Compliant	1105	1:$0.4300 10:$0.3270 100:$0.2430 500:$0.2000 1000:$0.1540 3000:$0.1410 6000:$0.1320 9000:$0.1230 24000:$0.1160
SI2333DDS-T1-GE3	Vishay Intertechnologies	Single P-Channel 12 V 0.028 O 35 nC Surface Mount Power Mosfet - SOT-23 RoHS: Compliant	33000Reel	3000:$0.2000
SI2333DDS-T1-GE3	Vishay Siliconix		2
SI2333DDS-T1-GE3 DISTI # 7879222	Vishay Intertechnologies	MOSFET P-CH 12V 5A TRENCHFET SOT23, PK	1120	10:£0.2330 30:£0.1500 150:£0.1450 750:£0.1390 1500:£0.1280
SI2333DDS-T1-GE3 DISTI # 9194220	Vishay Intertechnologies	MOSFET P-CH 12V 5A TRENCHFET SOT23, RL	3000	3000:£0.1120 9000:£0.1100
SI2333DDS-T1-GE3	Vishay Semiconductors	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB	1	1:$0.9000
SI2333DDS-T1-GE3 DISTI # TMOSS6695	Vishay Intertechnologies	P-CH 12V 6A 28mOhm SOT23 RoHS: Compliant	Stock DE - 0Stock US - 0	3000:$0.1461
SI2333DDS-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs SOT-23 RoHS: Compliant	Americas - 6000
SI2333DDS-T1-GE3 DISTI # 2283650	Vishay Intertechnologies	MOSFET, P-CH, 12V, SOT23 RoHS: Compliant	0	5:£0.2380 25:£0.1530 100:£0.1480 250:£0.1450 500:£0.1420
SI2333DDS-T1-GE3 DISTI # 2283650	Vishay Intertechnologies	MOSFET, P-CH, 12V, SOT23 RoHS: Compliant	0	1:$0.6810 10:$0.5180 100:$0.3850 500:$0.3170 1000:$0.2440 3000:$0.2230 6000:$0.2090 9000:$0.1950

画像	モデル	説明
	Mfr.#: SI2333DDS-T1-GE3 OMO.#: OMO-SI2333DDS-T1-GE3	MOSFET -12V Vds 8V Vgs SOT-23
	Mfr.#: SI2333DDS OMO.#: OMO-SI2333DDS-1190	ブランドニューオリジナル
	Mfr.#: SI2333DDS-T1 OMO.#: OMO-SI2333DDS-T1-1190	ブランドニューオリジナル
	Mfr.#: SI2333DDS-T1-E3 OMO.#: OMO-SI2333DDS-T1-E3-1190	ブランドニューオリジナル
	Mfr.#: SI2333DDS-T1-GE3 OMO.#: OMO-SI2333DDS-T1-GE3-VISHAY	MOSFET P-CH 12V 6A SOT23
	Mfr.#: SI2333DDS-T1-GE3-CUT TAPE OMO.#: OMO-SI2333DDS-T1-GE3-CUT-TAPE-1190	ブランドニューオリジナル

SI2333DDS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes