IPP77N06S212AKSA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

77 A

Rds On - Drain-Source Resistance:

9.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

60 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

158 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

15.65 mm

Length:

10 mm

Series:

XPP77N06

Transistor Type:

1 N-Channel

Width:

4.4 mm

Brand:

Infineon Technologies

Fall Time:

26 ns

Product Type:

MOSFET

Rise Time:

27 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

34 ns

Typical Turn-On Delay Time:

14 ns

Part # Aliases:

IPP77N06S2-12 IPP77N06S212XK SP000218172

Unit Weight:

0.063493 oz

Tags

IPP77N06S21, IPP77N06S2, IPP77, IPP7, IPP