BSC0996NSATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TDSON-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

34 V

Id - Continuous Drain Current:

13 A

Rds On - Drain-Source Resistance:

9 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

20 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Infineon Technologies

Forward Transconductance - Min:

13 S

Fall Time:

5.4 ns

Product Type:

MOSFET

Rise Time:

4.4 ns

Factory Pack Quantity:

5000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

8.9 ns

Typical Turn-On Delay Time:

9.7 ns

Part # Aliases:

BSC0996NS SP001659236

Tags

BSC09, BSC0, BSC