RQ7E110AJTCR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSMT-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

11 A

Rds On - Drain-Source Resistance:

6.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

500 mV

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

22 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.5 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

13 S

Fall Time:

79 ns

Product Type:

MOSFET

Rise Time:

18 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

87 ns

Typical Turn-On Delay Time:

22 ns

Part # Aliases:

RQ7E110AJ

Tags

RQ7E, RQ7