IPG20N06S4L11ATMA1

Mfr. #:: IPG20N06S4L11ATMA1
メーカー:: Infineon Technologies
説明:: MOSFET 2N-CH 8TDSON
ライフサイクル:: メーカー新製品
データシート:: IPG20N06S4L11ATMA1 データシート
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ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: FET-アレイ

シリーズ: Automotive, AEC-Q101, OptiMOS

包装: テープ＆リール（TR）

パッケージ-ケース: 8-PowerVDFN

作動温度: -55°C ~ 175°C (TJ)

取付タイプ: 表面実装

サプライヤー-デバイス-パッケージ: PG-TDSON-8-4 (5.15x6.15)

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 65W

Drain-to-Source-Voltage-Vdss: 60V

入力-静電容量-Ciss-Vds: 4020pF @ 25V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 20A

Rds-On-Max-Id-Vgs: 11.2 mOhm @ 17A, 10V

Vgs-th-Max-Id: 2.2V @ 28μA

ゲートチャージ-Qg-Vgs: 53nC @ 10V

Tags: IPG20N06S4L11AT, IPG20N06S4L11, IPG20N06S4L1, IPG20N06S4L, IPG20N06S4, IPG20N06, IPG20N0, IPG20, IPG2, IPG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPG20N06S4L11ATMA1 説明

***ure Electronics: IPG20N06S4L Series 60 V 11.2 mOhm OptiMOS-T2 Power-Transistor - PG-TDSON-8-4

***ical: Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R

***et Europe: Trans MOSFET N-CH 60V 20A 8-Pin TDSON T/R

***ronik: DUAL 60V 20A 11.2mOhm SuperSO-8

***i-Key: MOSFET 2N-CH 8TDSON

***ark: Mosfet, Aec-Q101, Dual N-Ch, Tdson-8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0095Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Powerrohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, DUAL N-CH, TDSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:65W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, AEC-Q101, DOPPIO CA-N TDSON-8; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:20A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0095ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:65W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting

Market price

モデル	メーカー	説明	ストック	価格
IPG20N06S4L11ATMA1 DISTI # IPG20N06S4L11ATMA1-ND	Infineon Technologies AG	MOSFET 2N-CH 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.9238
IPG20N06S4L-11 DISTI # IPG20N06S4L11ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG20N06S4L11ATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.9299 10000:$0.8969 20000:$0.8639 30000:$0.8349 50000:$0.8199
IPG20N06S4L11ATMA1 DISTI # 13AC9057	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, TDSON-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0095ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,PowerRoHS Compliant: Yes	215	1:$2.1500 10:$1.8900 25:$1.7100 50:$1.5300 100:$1.3300 250:$1.1400 500:$1.0400 1000:$0.9840
IPG20N06S4L-11 DISTI # 726-IPG20N06S4L-11	Infineon Technologies AG	MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 RoHS: Compliant	221	1:$1.9100 10:$1.6200 100:$1.3000 500:$1.1400 1000:$0.9370 2500:$0.8730 5000:$0.8400
IPG20N06S4L11ATMA1	Infineon Technologies AG	IPG20N06S4L Series 60 V 11.2 mOhm OptiMOS-T2 Power-Transistor - PG-TDSON-8-4 RoHS: Compliant	55000Reel	5000:$0.9950
IPG20N06S4L11ATMA1 DISTI # 2725855	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, TDSON-8 RoHS: Compliant	525	5:£0.9130 25:£0.8950 100:£0.8760
IPG20N06S4L11ATMA1 DISTI # 2725855	Infineon Technologies AG	MOSFET, AEC-Q101, DUAL N-CH, TDSON-8 RoHS: Compliant	215	1:$3.1800 10:$2.7700 100:$2.2600

画像	モデル	説明
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	Mfr.#: IPG20N06S415AATMA1 OMO.#: OMO-IPG20N06S415AATMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 8TDSON
	Mfr.#: IPG20N06S2L-65 OMO.#: OMO-IPG20N06S2L-65-1190	MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
	Mfr.#: IPG20N06S2L50ATMA1 OMO.#: OMO-IPG20N06S2L50ATMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 55V 20A TDSON-8-4
	Mfr.#: IPG20N06S3L-23 OMO.#: OMO-IPG20N06S3L-23-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 55V 20A TDSON-8

IPG20N06S4L11ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes