HGTG10N120BND

HGTG10N120BND
Mfr. #:
HGTG10N120BND
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 35A 1200V N-Ch
Lifecycle:
New from this manufacturer.
Datasheet:
HGTG10N120BND Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
E
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.45 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
17 A
Pd - Power Dissipation:
298 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
HGTG10N120BND
Packaging:
Tube
Continuous Collector Current Ic Max:
35 A
Height:
20.82 mm
Length:
15.87 mm
Width:
4.82 mm
Brand:
ON Semiconductor / Fairchild
Continuous Collector Current:
35 A
Gate-Emitter Leakage Current:
+/- 250 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
450
Subcategory:
IGBTs
Part # Aliases:
HGTG10N120BND_NL
Unit Weight:
0.225401 oz
Tags
HGTG10N120BND, HGTG10N120B, HGTG10, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Max:298W
***rchild Semiconductor
HGTG10N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Part # Mfg. Description Stock Price
HGTG10N120BND
DISTI # C1S541901484134
ON SemiconductorTrans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
140
  • 100:$2.5900
  • 50:$2.8200
  • 10:$3.4400
  • 1:$5.3000
HGTG10N120BND
DISTI # HGTG10N120BND-ND
ON SemiconductorIGBT 1200V 35A 298W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
855In Stock
  • 1350:$2.1481
  • 900:$2.5216
  • 450:$2.7946
  • 10:$3.5560
  • 1:$3.9500
HGTG10N120BND
DISTI # HGTG10N120BND
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.6900
  • 10:€1.5900
  • 25:€1.5900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.3900
  • 1000:€1.3900
HGTG10N120BND
DISTI # HGTG10N120BND
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 450
Asia - 0
    HGTG10N120BND
    DISTI # HGTG10N120BND
    ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube
    Americas - 0
    • 450:$1.5900
    • 900:$1.5900
    • 1800:$1.5900
    • 2700:$1.4900
    • 4500:$1.4900
    HGTG10N120BND
    DISTI # 98B1928
    ON SemiconductorSINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
    • 1:$3.7700
    • 10:$3.2200
    • 25:$3.0800
    • 50:$2.9500
    • 100:$2.8100
    • 250:$2.6800
    • 500:$2.4200
    HGTG10N120BND.
    DISTI # 16AC0004
    Fairchild Semiconductor CorporationDC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes0
      HGTG10N120BNDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant
      485
      • 1000:$1.8000
      • 500:$1.9000
      • 100:$1.9800
      • 25:$2.0600
      • 1:$2.2200
      HGTG10N120BNDON SemiconductorHGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
      RoHS: Compliant
      75Tube
      • 5:$2.9400
      • 25:$1.9900
      • 50:$1.8300
      • 250:$1.5100
      HGTG10N120BND
      DISTI # 512-HGTG10N120BND
      ON SemiconductorIGBT Transistors 35A 1200V N-Ch
      RoHS: Compliant
      29
      • 1:$3.6300
      • 10:$3.0800
      • 100:$2.6700
      • 250:$2.5400
      • 500:$2.2800
      HGTG10N120BND_Q
      DISTI # 512-HGTG10N120BND_Q
      ON SemiconductorIGBT Transistors 35A 1200V N-Ch
      RoHS: Not compliant
      0
        HGTG10N120BNDHarris Semiconductor 20
          HGTG10N120BND
          DISTI # HGTG10N120BND
          ON SemiconductorTransistor: IGBT,1.2kV,17A,298W,TO247429
          • 1:$3.6000
          • 3:$3.1900
          • 10:$2.7200
          • 30:$2.3500
          • 150:$2.1300
          HGTG10N120BNDFairchild Semiconductor Corporation 
          RoHS: Compliant
          Europe - 1130
            Image Part # Description
            OPA145IDBVR

            Mfr.#: OPA145IDBVR

            OMO.#: OMO-OPA145IDBVR

            Operational Amplifiers - Op Amps LOW POWER PRECISION JFET
            BC807-25LT1G

            Mfr.#: BC807-25LT1G

            OMO.#: OMO-BC807-25LT1G

            Bipolar Transistors - BJT 500mA 50V PNP
            HGTG18N120BND

            Mfr.#: HGTG18N120BND

            OMO.#: OMO-HGTG18N120BND

            IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
            IRG4PH50UDPBF

            Mfr.#: IRG4PH50UDPBF

            OMO.#: OMO-IRG4PH50UDPBF

            IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT
            AP2204MP-ADJTRG1

            Mfr.#: AP2204MP-ADJTRG1

            OMO.#: OMO-AP2204MP-ADJTRG1

            LDO Voltage Regulators 150mA CMOS LDO 2.3V to 24V
            HE1AN-W-DC12V-Y7

            Mfr.#: HE1AN-W-DC12V-Y7

            OMO.#: OMO-HE1AN-W-DC12V-Y7

            General Purpose Relays 12VDC 1 Form A 50x40x42mm TH
            HGTG18N120BND

            Mfr.#: HGTG18N120BND

            OMO.#: OMO-HGTG18N120BND-ON-SEMICONDUCTOR

            IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
            PH9400.111ANLT

            Mfr.#: PH9400.111ANLT

            OMO.#: OMO-PH9400-111ANLT-PULSE-ELECTRONICS

            Power Transformer 1:1:1 5000Vrms 8Term. Gull Wing SMD
            AP2204MP-ADJTRG1

            Mfr.#: AP2204MP-ADJTRG1

            OMO.#: OMO-AP2204MP-ADJTRG1-DIODES-INCORPORATED

            LDO Voltage Regulators 150mA CMOS LDO 2.3V to 24V
            HE1AN-W-DC12V-Y7

            Mfr.#: HE1AN-W-DC12V-Y7

            OMO.#: OMO-HE1AN-W-DC12V-Y7-PANASONIC

            HE-N High Capacity Relay, 12VDC coil
            Availability
            Stock:
            641
            On Order:
            2624
            Enter Quantity:
            Current price of HGTG10N120BND is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
            Reference price (USD)
            Quantity
            Unit Price
            Ext. Price
            1
            $3.62
            $3.62
            10
            $3.07
            $30.70
            100
            $2.66
            $266.00
            250
            $2.53
            $632.50
            500
            $2.27
            $1 135.00
            1000
            $1.91
            $1 910.00
            2500
            $1.82
            $4 550.00
            5000
            $1.75
            $8 750.00
            Start with
            Newest Products
            • FPF1203LUCX IntelliMAX™ Load Switches
              ON Semiconductor FPF1203 / 03L / 04 / 45 are ultra-small integrated IntelliMAX load switches.
            • Compare HGTG10N120BND
              HGTG10N120BND vs HGTG10N120BND10N120BND vs HGTG10N120BNDHGTG10N120
            • Point-of-Load (POL) Regulators
              ON Semiconductor TinyBuck POL regulators with integrated PWM controller, driver and MOSFETs optimize performance and energy savings.
            • N-Channel SuperFET® II MOSFET
              Tailored to minimize conduction loss, provide superior switching performance and suitable for various AC / DC power conversions from On Semiconductor.
            • Silicon Carbide (SiC) MOSFETs
              ON Semiconductor's silicon carbide (SiC) MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon.
            • NCP3230 Synchronous Buck Converter
              ON Semiconductor's NCP3230 is a high current, high efficiency, voltage-feed-forward, voltage-mode synchronous buck converter which operates from 4.5 V to 18 V input and generates output voltag
            Top