 |  | | |
| PartNumber | HGTG10N120BND | HGTG10N120BN | HGTG10N120BND 10N120BND |
| Description | IGBT Transistors 35A 1200V N-Ch | Transistor: IGBT, 1.2kV, 17A, 298W, TO247-3 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.45 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 17 A | - | - |
| Pd Power Dissipation | 298 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGTG10N120BND | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 35 A | - | - |
| Height | 20.82 mm | - | - |
| Length | 15.87 mm | - | - |
| Width | 4.82 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 35 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGTG10N120BND_NL | - | - |
| Unit Weight | 0.225401 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTG10N120BND | IGBT Transistors 35A 1200V N-Ch | |
ON Semiconductor |
HGTG10N120BND | IGBT 1200V 35A 298W TO247 | |
| HGTG10N120BN | Transistor: IGBT, 1.2kV, 17A, 298W, TO247-3 | ||
| HGTG10N120BND 10N120BND | New and Original | ||
| HGTG10N120BND,HGTG10N120 | New and Original | ||
| HGTG10N120BND,HGTG10N120B, | New and Original | ||
| HGTG10N120BNDTU | New and Original | ||
| HGTG10N120BND_NL | New and Original | ||
| HGTG10N120BNS | New and Original | ||
| HGTG10N120BND_Q | IGBT Transistors 35A 1200V N-Ch |