JAN2N918UB/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

LCC-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

15 V

Collector- Base Voltage VCBO:

30 V

Emitter- Base Voltage VEBO:

3 V

Collector-Emitter Saturation Voltage:

0.4 V

Maximum DC Collector Current:

50 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

200 at 3 mA, 1 V

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

10 at 500 uA, 10 V

Pd - Power Dissipation:

200 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

JAN2N918, JAN2N91, Jan2N9, Jan2N, Jan2, JAN