S25FL128SAGBHV200

Mfr. #:: S25FL128SAGBHV200
メーカー:: Cypress Semiconductor
説明:: IC FLASH 128M SPI 133MHZ 24BGA FL-S
ライフサイクル:: メーカー新製品
データシート:: S25FL128SAGBHV200 データシート
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詳しくは:: S25FL128SAGBHV200 詳しくは S25FL128SAGBHV200 Product Details

製品属性
属性値

メーカー: サイプレスセミコンダクター株式会社

製品カテゴリ: メモリー

シリーズ: FL-S

包装: トレイ代替包装

パッケージ-ケース: 24-TBGA

作動温度: -40°C ~ 105°C (TA)

インターフェース: SPIシリアル

電圧供給: 2.7 V ~ 3.6 V

サプライヤー-デバイス-パッケージ: 24-BGA (6x8)

メモリー容量: 128M (16M x 8)

メモリタイプ: フラッシュ-NOR

スピード: 133MHz

フォーマット-メモリ: 閃光

Tags: S25FL128SAGBHV, S25FL128SAGB, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S25FL128SAGBHV200 説明

***ress Semiconductor SCT: Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS

***ure Electronics: S25FL128S Series 3.6V 128 Mb (16 M x 8) Industrial Grade Serial Flash - BGA-24

***ark: Tray Pkged / 128-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 133-Mhz Spi (Serial Peripheral Interface) And Multi I/o Bus - 64Kb, Bga-Fab024 In Tray Packing

S25FL128SAGBHV200 詳しくは

S25FL128S NOR Flash Memory Devices: Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

モデル	メーカー	説明	ストック	価格
S25FL128SAGBHV200 DISTI # S25FL128SAGBHV200-ND	Cypress Semiconductor	IC FLASH 128M SPI 133MHZ 24BGA RoHS: Compliant Min Qty: 1 Container: Tray	On Order	1014:$2.5526 676:$2.6848 338:$2.7875 100:$2.7979 50:$3.1198 25:$3.1372 10:$3.2070 1:$3.5300
S25FL128SAGBHV200 DISTI # 51Y0984	Cypress Semiconductor	TRAY PKGED / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, BGA-FAB024 IN TRAY PACKING	0	1:$2.9400 10:$2.6500 25:$2.6000 50:$2.4400 100:$2.3200 200:$2.2700 500:$2.2100 1000:$2.1600
S25FL128SAGBHV200	Spansion	RoHS: Not Compliant	39	1000:$2.9600 500:$3.1100 100:$3.2400 25:$3.3800 1:$3.6400
S25FL128SAGBHV200 DISTI # 727-S25FL128SAGBHV20	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1:$4.8700 10:$4.3500 25:$3.9200 100:$3.5700 250:$3.2200

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