BLV34

Product Attribute

Attribute Value

Manufacturer:

Advanced Semiconductor, Inc.

Product Category:

RF Bipolar Transistors

RoHS:

Y

Transistor Type:

Bipolar Power

Technology:

Si

DC Collector/Base Gain hfe Min:

25

Collector- Emitter Voltage VCEO Max:

75 V

Emitter- Base Voltage VEBO:

4 V

Continuous Collector Current:

15 A

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Mounting Style:

Through Hole

Packaging:

Tray

Operating Frequency:

225 MHz

Type:

RF Bipolar Power

Brand:

Advanced Semiconductor, Inc.

Pd - Power Dissipation:

150 W

Product Type:

RF Bipolar Transistors

Subcategory:

Transistors

Tags

BLV34, BLV3, BLV