| PartNumber | BLV31 | BLV33 | BLV32F |
| Description | RF Bipolar Transistors RF Transistor | RF Bipolar Transistors RF Transistor | RF Bipolar Transistors RF Transistor |
| Manufacturer | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | RF Bipolar Transistors |
| RoHS | Y | Y | Y |
| Transistor Type | Bipolar Power | Bipolar Power | Bipolar Power |
| Technology | Si | Si | Si |
| Transistor Polarity | NPN | NPN | NPN |
| DC Collector/Base Gain hfe Min | 15 | 15 | 20 |
| Collector Emitter Voltage VCEO Max | 30 V | 33 V | 32 V |
| Emitter Base Voltage VEBO | 4 V | 4 V | 4 V |
| Continuous Collector Current | 3 A | 12.5 A | 4 A |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
| Mounting Style | Through Hole | Through Hole | Screw Mount |
| Package / Case | SOT-122A | SOT-147 | 316-01 |
| Packaging | Tray | Tray | Tray |
| Operating Frequency | 224 MHz | 224 MHz | 224 MHz |
| Type | RF Bipolar Power | RF Bipolar Power | RF Bipolar Power |
| Brand | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. |
| Maximum DC Collector Current | 6 A | 20 A | - |
| Pd Power Dissipation | 7 W | 132 W | 82 W |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | RF Bipolar Transistors |
| Subcategory | Transistors | Transistors | Transistors |