ZXMP6A18DN8TA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

2 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

4.8 A

Rds On - Drain-Source Resistance:

55 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

23 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.1 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.5 mm

Length:

5 mm

Series:

ZXMP6A18

Transistor Type:

2 P-Channel

Width:

4 mm

Brand:

Diodes Incorporated

Forward Transconductance - Min:

8.7 S

Fall Time:

23 ns

Product Type:

MOSFET

Rise Time:

5.8 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

55 ns

Typical Turn-On Delay Time:

4.6 ns

Unit Weight:

0.002610 oz

Tags

ZXMP6A18D, ZXMP6A18, ZXMP6, ZXMP, ZXM