LMG1205YFXR

LMG1205YFXR
Mfr. #:
LMG1205YFXR
説明:
Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH
ライフサイクル:
メーカー新製品
データシート:
LMG1205YFXR データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
LMG1205YFXR 詳しくは LMG1205YFXR Product Details
製品属性
属性値
メーカー:
テキサスインスツルメンツ
製品カテゴリ:
ゲートドライバー
JBoss:
Y
製品:
ハーフブリッジドライバー
タイプ:
ハイサイド、ローサイド
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
DSBGA-12
ドライバーの数:
2 Driver
出力数:
2 Output
出力電流:
5 A
立ち上がり時間:
7 ns
立ち下がり時間:
3.5 ns
供給電圧-最小:
4.5 V
供給電圧-最大:
5.5 V
動作供給電流:
2 mA
最低動作温度:
- 40 C
最高作動温度:
+ 125 C
シリーズ:
LMG1205
包装:
リール
動作温度範囲:
- 40 C to + 125 C
テクノロジー:
Si
ブランド:
テキサスインスツルメンツ
最大ターンオフ遅延時間:
50 ns
最大ターンオン遅延時間:
50 ns
製品タイプ:
ゲートドライバー
ファクトリーパックの数量:
3000
サブカテゴリ:
PMIC-パワーマネジメントIC
単位重量:
0.000120 oz
Tags
LMG120, LMG12, LMG1, LMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**o
    E**o
    NL

    Good quality

    2019-07-15
    D***k
    D***k
    RU

    Well packed and soldered.

    2019-05-19
    V***i
    V***i
    RU

    It came quickly. Works well. Thank you

    2019-09-21
    D***o
    D***o
    CO

    It never came, i got my money back

    2019-09-20
***as Instruments
100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA -40 to 125
***et Europe
100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 12-Pin DSBGA T/R
***ical
Driver 5A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 12-Pin DSBGA T/R
***i-Key
IC GATE DRVR HALF-BRIDGE 12DSBGA
***ark
5A 100V Half-Bridge Gate Driver For Enh
***OMO Electronic
The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
***as Instruments Inc.
In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.
LMG1205 Half-Bridge Gate Driver
OMO Electronic LMG1205 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5V. This feature prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LMG1205 has split-gate outputs which provide flexibility to adjust the turn-on and turn-off strength independently.
Gallium Nitride (GaN)
OMO Electronic Gallium Nitride (GaN) solutions deliver high-efficiency, power density, and reliability. The OMO Electronic GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.
モデル 説明 ストック 価格
LMG1205YFXR
DISTI # 31725737
5A 100V HALF-BRIDGE GATE DRIVE9000
  • 3000:$1.7440
LMG1205YFXR
DISTI # 296-48589-1-ND
IC GATE DRVR HALF-BRIDGE 12DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4230In Stock
  • 1000:$1.8905
  • 500:$2.2415
  • 100:$2.6331
  • 10:$3.2140
  • 1:$3.5800
LMG1205YFXR
DISTI # 296-48589-6-ND
IC GATE DRVR HALF-BRIDGE 12DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4230In Stock
  • 1000:$1.8905
  • 500:$2.2415
  • 100:$2.6331
  • 10:$3.2140
  • 1:$3.5800
LMG1205YFXR
DISTI # 296-48589-2-ND
IC GATE DRVR HALF-BRIDGE 12DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 3000:$1.7436
LMG1205YFXR
DISTI # V39:1801_17535454
5A 100V HALF-BRIDGE GATE DRIVE0
  • 3000000:$1.5890
  • 1500000:$1.5900
  • 300000:$1.6480
  • 30000:$1.7310
  • 3000:$1.7440
LMG1205YFXR
DISTI # V72:2272_17535454
5A 100V HALF-BRIDGE GATE DRIVE0
    LMG1205YFXR
    DISTI # V36:1790_17535454
    5A 100V HALF-BRIDGE GATE DRIVE0
    • 3000000:$1.5890
    • 1500000:$1.5900
    • 300000:$1.6480
    • 30000:$1.7310
    • 3000:$1.7440
    LMG1205YFXR
    DISTI # LMG1205YFXR
    100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 12-Pin DSBGA T/R - Tape and Reel (Alt: LMG1205YFXR)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
      LMG1205YFXR
      DISTI # LMG1205YFXR
      100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 12-Pin DSBGA T/R (Alt: LMG1205YFXR)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Europe - 0
      • 30000:€1.4900
      • 18000:€1.5900
      • 12000:€1.6900
      • 6000:€1.8900
      • 3000:€2.1900
      LMG1205YFXR100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs6191
      • 1000:$1.4900
      • 750:$1.5600
      • 500:$1.8500
      • 250:$2.1800
      • 100:$2.3200
      • 25:$2.6500
      • 10:$2.8500
      • 1:$3.1600
      LMG1205YFXR
      DISTI # 595-LMG1205YFXR
      Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH
      RoHS: Compliant
      5925
      • 1:$3.4700
      • 10:$3.1200
      • 100:$2.5500
      • 250:$2.4000
      • 500:$2.1700
      • 1000:$1.8300
      • 3000:$1.7400
      LMG1205YFXT
      DISTI # 595-LMG1205YFXT
      Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH
      RoHS: Compliant
      1921
      • 1:$3.9900
      • 10:$3.5900
      • 100:$2.9400
      • 250:$2.7600
      • 500:$2.5000
      • 1000:$2.1100
      • 2500:$2.0000
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      Mfr.#: LMG1020YFFR

      OMO.#: OMO-LMG1020YFFR

      Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
      AD8603AUJZ-REEL7

      Mfr.#: AD8603AUJZ-REEL7

      OMO.#: OMO-AD8603AUJZ-REEL7-ANALOG-DEVICES-INC-ADI

      Precision Amplifiers MicroPwr RRIO Low Noise Prec SGL CMOS
      LMG1205HBEVM

      Mfr.#: LMG1205HBEVM

      OMO.#: OMO-LMG1205HBEVM-TEXAS-INSTRUMENTS

      EVM OF LMG1205
      TGM-040P3RLTR

      Mfr.#: TGM-040P3RLTR

      OMO.#: OMO-TGM-040P3RLTR-1190

      Pulse Transformers ISO MOD SMD GullWing PCMCIA For MAX845
      可用性
      ストック:
      Available
      注文中:
      1988
      数量を入力してください:
      LMG1205YFXRの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $3.47
      $3.47
      10
      $3.12
      $31.20
      100
      $2.55
      $255.00
      250
      $2.40
      $600.00
      500
      $2.17
      $1 085.00
      1000
      $1.83
      $1 830.00
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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