LMG3411R070RWHR

LMG3411R070RWHR
Mfr. #:
LMG3411R070RWHR
説明:
Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
ライフサイクル:
メーカー新製品
データシート:
LMG3411R070RWHR データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
LMG3411R070RWHR 詳しくは LMG3411R070RWHR Product Details
製品属性
属性値
メーカー:
テキサスインスツルメンツ
製品カテゴリ:
ゲートドライバー
JBoss:
Y
製品:
MOSFETゲートドライバ
タイプ:
ハイサイド、ローサイド
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
QFN-32
ドライバーの数:
1 Driver
出力数:
1 Output
立ち上がり時間:
15 ns
立ち下がり時間:
4.2 ns
供給電圧-最小:
9.5 V
供給電圧-最大:
18 V
伝播遅延-最大:
36 ns
動作供給電流:
43 mA
最低動作温度:
- 40 C
最高作動温度:
+ 125 C
シリーズ:
LMG3411R070
包装:
リール
動作温度範囲:
- 40 C to + 125 C
出力電圧:
5 V
テクノロジー:
Si
ブランド:
テキサスインスツルメンツ
最大ターンオフ遅延時間:
10 ns
最大ターンオン遅延時間:
12 ns
感湿性:
はい
製品タイプ:
ゲートドライバー
Rds On-ドレイン-ソース抵抗:
70 mOhms
ファクトリーパックの数量:
2000
サブカテゴリ:
PMIC-パワーマネジメントIC
Tags
LMG3411, LMG341, LMG34, LMG3, LMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    O***v
    O***v
    RU

    The product corresponds to the description

    2019-05-08
    K***E
    K***E
    KR

    cheap and good working.

    2019-08-06
    A***A
    A***A
    ID

    the super capacitor was very powerfull..good product..recommended seller..awesome!

    2019-06-27
***AS INSTRUMENTS INCORPORATED
The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
***XS
The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
LMG3410R070 600V 70mΩ GaN Power Stage
OMO Electronic LMG3410R070 600V 70mΩ GaN Power Stage with integrated driver and protection offers advantages over silicon MOSFETs. These include ultra-low input and output capacitance. Features include zero reverse recovery reducing switching losses by as much as 80% and low switch node ringing to decreasing EMI.
画像 モデル 説明
LMG3411R070RWHR

Mfr.#: LMG3411R070RWHR

OMO.#: OMO-LMG3411R070RWHR

Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
LMG3411EVM-029

Mfr.#: LMG3411EVM-029

OMO.#: OMO-LMG3411EVM-029-TEXAS-INSTRUMENTS

LMG3411EVM-029 HALF BRIDGE
LMG3411R070RWHT

Mfr.#: LMG3411R070RWHT

OMO.#: OMO-LMG3411R070RWHT-TEXAS-INSTRUMENTS

600-V 70m GaN with integrated driver and cycle-by-cycle overcurrent protection
LMG3411EVM-018

Mfr.#: LMG3411EVM-018

OMO.#: OMO-LMG3411EVM-018-1190

LMG3411R050 daughter card
可用性
ストック:
Available
注文中:
1500
数量を入力してください:
LMG3411R070RWHRの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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