HP8M51TB1

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

HSOP-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

4.5 A

Rds On - Drain-Source Resistance:

170 mOhms, 290 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

15 nC, 26.2 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

7 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel, 1 P-Channel

Brand:

ROHM Semiconductor

Fall Time:

14 ns, 19 ns

Product Type:

MOSFET

Rise Time:

13 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

50 ns, 75 ns

Typical Turn-On Delay Time:

13 ns, 15 ns

Tags

HP8M, HP8