IRF7492TRPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

3.7 A

Rds On - Drain-Source Resistance:

79 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

39 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.75 mm

Length:

4.9 mm

Transistor Type:

1 N-Channel

Width:

3.9 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

7.9 S

Fall Time:

14 ns

Product Type:

MOSFET

Rise Time:

13 ns

Factory Pack Quantity:

4000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

27 ns

Typical Turn-On Delay Time:

15 ns

Part # Aliases:

SP001572102

Unit Weight:

0.017870 oz

Tags

IRF7492T, IRF7492, IRF749, IRF74, IRF7, IRF