BSS87 H6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

P-SOT-89-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

240 V

Id - Continuous Drain Current:

260 mA

Rds On - Drain-Source Resistance:

6 Ohms

Vgs th - Gate-Source Threshold Voltage:

800 mV

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

3.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.5 mm

Length:

4.5 mm

Series:

BSS87

Transistor Type:

1 N-Channel

Width:

2.5 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

160 mS

Fall Time:

27.3 ns

Product Type:

MOSFET

Rise Time:

3.5 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

17.6 ns

Typical Turn-On Delay Time:

3.7 ns

Part # Aliases:

BSS87H6327FTSA1 SP001047646

Unit Weight:

0.001781 oz

Tags

BSS87H, BSS87, BSS8, BSS