F3L300R12ME4_B22

Mfr. #:: F3L300R12ME4_B22
メーカー:: Infineon Technologies
説明:: IGBT Modules IGBT Module 300A 1200V
ライフサイクル:: メーカー新製品
データシート:: F3L300R12ME4_B22 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー：: インフィニオン

製品カテゴリ：: IGBTモジュール

JBoss：: Y

包装：: トレイ

ブランド：: インフィニオンテクノロジーズ

製品タイプ：: IGBTモジュール

ファクトリーパックの数量：: 10

サブカテゴリ：: IGBT

パーツ番号エイリアス：: F3L300R12ME4B22BOSA1 SP000931254

Tags: F3L300R12ME4_B, F3L300R12ME, F3L300R12M, F3L300R1, F3L300, F3L3, F3L

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

F3L300R12ME4_B22 説明

***et Europe: EconoDUAL 3 Module with Trench/Fieldstop IGBT 4 and Emitter Controlled HE diode/NTC

***ronik: IGBT 1200V 450A EconoDUAL3

***i-Key: IGBT MODULE VCES 650V 300A

***omponent: Infineon power module

***et: MEDIUM POWER ECONO

***ineon: EconoDUAL 3 1200V 3-level phase leg IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode and 3-Level NTC1 upper switch. | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); Unbeatable Robustness; T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; welding

Market price

モデル	メーカー	説明	ストック	価格
F3L300R12ME4B22BOSA1 DISTI # F3L300R12ME4B22BOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 650V 300A RoHS: Not compliant Min Qty: 10 Container: Bulk	Temporarily Out of Stock	10:$174.0550
F3L300R12ME4_B22 DISTI # SP000931254	Infineon Technologies AG	EconoDUAL 3 Module with Trench/Fieldstop IGBT 4 and Emitter Controlled HE diode/NTC (Alt: SP000931254) RoHS: Compliant Min Qty: 1	Europe - 0	1:€227.2900 10:€183.6900 25:€166.9900 50:€161.2900 100:€155.9900 500:€151.4900 1000:€148.0900
F3L300R12ME4B22BOSA1 DISTI # F3L300R12ME4B22BOSA1	Infineon Technologies AG	MEDIUM POWER ECONO - Trays (Alt: F3L300R12ME4B22BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$180.6900 20:$174.1900 40:$167.8900 60:$162.2900 100:$159.3900
F3L300R12ME4_B22 DISTI # 641-F3L300R12ME4_B22	Infineon Technologies AG	IGBT Modules IGBT Module 300A 1200V RoHS: Compliant	8	1:$181.9300 5:$177.5500 10:$173.1400 25:$170.7200
F3L300R12ME4_B22	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	315	1000:$151.4700 500:$159.4500 100:$166.0000 25:$173.1100 1:$186.4300
F3L300R12ME4B22BOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	400	1000:$151.4700 500:$159.4500 100:$166.0000 25:$173.1100 1:$186.4300

F3L300R12ME4_B22

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes