IPW65R190C6

IPW65R190C6
Mfr. #:
IPW65R190C6
メーカー:
Rochester Electronics, LLC
説明:
Darlington Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6
ライフサイクル:
メーカー新製品
データシート:
IPW65R190C6 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
シリーズ
CoolMOS C6
包装
チューブ
パーツエイリアス
IPW65R190C6FKSA1 IPW65R190C6XK SP000863902
単位重量
1.340411 oz
取り付けスタイル
スルーホール
商標名
CoolMOS
パッケージ-ケース
TO-247-3
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
151 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
10 ns
立ち上がり時間
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
20.2 A
Vds-ドレイン-ソース-ブレークダウン-電圧
700 V
Rds-On-Drain-Source-Resistance
190 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
133 nS
Qg-Gate-Charge
73 nC
Tags
IPW65R190C6, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-247 Tube
***et
Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-247
***et Europe
Trans MOSFET N-CH 700V 20.2A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 650V 20.2A TO247
***ronik
N-CH 650V 20,2A 190mOhm TO247-3 RoHSconf
***ukat
N-Ch 650V 20,2A 151W 0,19R TO247
***ineon
CoolMOS C6 combines 's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
モデル メーカー 説明 ストック 価格
IPW65R190C6FKSA1
DISTI # IPW65R190C6FKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 20.2A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IPW65R190C6
    DISTI # 726-IPW65R190C6
    Infineon Technologies AGMOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6
    RoHS: Compliant
    91
    • 1:$3.8300
    • 10:$3.2600
    • 100:$2.8200
    IPW65R190C6FKSA1
    DISTI # N/A
    Infineon Technologies AGMOSFET HIGH POWER_LEGACY0
      IPW65R190C6Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant
      470
      • 1000:$1.9600
      • 500:$2.0600
      • 100:$2.1400
      • 25:$2.2400
      • 1:$2.4100
      IPW65R190C6FKSA1Infineon Technologies AGPower Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant
      4080
      • 1000:$1.9600
      • 500:$2.0600
      • 100:$2.1400
      • 25:$2.2400
      • 1:$2.4100
      IPW65R190C6FKSA1
      DISTI # IPW65R190C6
      Infineon Technologies AGN-Ch 650V 20,2A 151W 0,19R TO247
      RoHS: Compliant
      265
      • 1:€3.8200
      • 10:€1.8200
      • 50:€1.3200
      • 100:€1.2600
      画像 モデル 説明
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      Mfr.#: IPW65R041CFDFKSA2

      OMO.#: OMO-IPW65R041CFDFKSA2-INFINEON-TECHNOLOGIES

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      Mfr.#: IPW65R041CFD,IPW65R099C6

      OMO.#: OMO-IPW65R041CFD-IPW65R099C6-1190

      ブランドニューオリジナル
      IPW65R070C6 65C6070

      Mfr.#: IPW65R070C6 65C6070

      OMO.#: OMO-IPW65R070C6-65C6070-1190

      ブランドニューオリジナル
      IPW65R080CFDFKSA1

      Mfr.#: IPW65R080CFDFKSA1

      OMO.#: OMO-IPW65R080CFDFKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 700V 43.3A TO247
      IPW65R099C6S

      Mfr.#: IPW65R099C6S

      OMO.#: OMO-IPW65R099C6S-1190

      ブランドニューオリジナル
      IPW65R190CFDAFKSA1

      Mfr.#: IPW65R190CFDAFKSA1

      OMO.#: OMO-IPW65R190CFDAFKSA1-INFINEON-TECHNOLOGIES

      RF Bipolar Transistors MOSFET N-Ch 650V 17.5A TO247-3
      可用性
      ストック:
      Available
      注文中:
      2000
      数量を入力してください:
      IPW65R190C6の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $2.94
      $2.94
      10
      $2.79
      $27.93
      100
      $2.65
      $264.60
      500
      $2.50
      $1 249.50
      1000
      $2.35
      $2 352.00
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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