 | | | |
| PartNumber | IPW65R190CFD | IPW65R190C7XKSA1 | IPW65R190C6FKSA1 |
| Description | MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2 | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_LEGACY |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 17.5 A | 13 A | - |
| Rds On Drain Source Resistance | 190 mOhms | 168 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 3 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 68 nC | 23 nC | - |
| Pd Power Dissipation | 151 W | 72 W | - |
| Configuration | Single | Single | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 21.1 mm | 21.1 mm | 21.1 mm |
| Length | 16.13 mm | 16.13 mm | 16.13 mm |
| Series | CoolMOS CFD2 | CoolMOS C7 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.21 mm | 5.21 mm | 5.21 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 6.4 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8.4 ns | 11 ns | - |
| Factory Pack Quantity | 240 | 240 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPW65R190CFDFKSA1 IPW65R19CFDXK SP000905376 | IPW65R190C7 SP001080142 | IPW65R190C6FKSA1 SP000863902 |
| Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Channel Mode | - | Enhancement | - |
| Typical Turn Off Delay Time | - | 54 ns | - |
| Typical Turn On Delay Time | - | 11 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPW65R190CFD | MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2 | |
| IPW65R190C7XKSA1 | MOSFET HIGH POWER_NEW | ||
| IPW65R190CFDAFKSA1 | MOSFET N-Ch 650V 17.5A TO247-3 | ||
| IPW65R190CFDA | MOSFET N-Ch 650V 17.5A TO247-3 | ||
| IPW65R190CFDFKSA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPW65R190CFDFKSA2 | HIGH POWER_LEGACY | ||
| IPW65R190C6FKSA1 | MOSFET N-CH 650V 20.2A TO247 | ||
| IPW65R190C7XKSA1 | MOSFET N-CH 650V 20.2A TO247 | ||
| IPW65R190CFDFKSA1 | MOSFET N-CH 650V 17.5A TO247 | ||
| IPW65R190E6FKSA1 | MOSFET N-CH 650V 20.2A TO247 | ||
| IPW65R190CFDAFKSA1 | RF Bipolar Transistors MOSFET N-Ch 650V 17.5A TO247-3 | ||
Infineon Technologies |
IPW65R190C6FKSA1 | MOSFET HIGH POWER_LEGACY | |
| IPW65R190C6/SL21N65CT | New and Original | ||
| IPW65R190CFD , 2SJ314 | New and Original | ||
| IPW65R190CFD(SP00090537 | New and Original | ||
| IPW65R190CFD(SP000905376 | New and Original | ||
| IPW65R190CFDA | MOSFET N-Ch 650V 17.5A TO247-3 | ||
| IPW65R190CFD | Darlington Transistors MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2 | ||
| IPW65R190C6 | Darlington Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6 | ||
| IPW65R190E6 | IGBT Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS E6 |