IPB260N06N3G

IPB260N06N3G
Mfr. #:
IPB260N06N3G
メーカー:
Rochester Electronics, LLC
説明:
Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ライフサイクル:
メーカー新製品
データシート:
IPB260N06N3G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
IPB260N06N3G, IPB260, IPB26, IPB2, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
モデル メーカー 説明 ストック 価格
IPB260N06N3GATMA1
DISTI # IPB260N06N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 27A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB260N06N3GATMA1
    DISTI # IPB260N06N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 60V 27A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPB260N06N3GATMA1
      DISTI # IPB260N06N3GATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 60V 27A TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPB260N06N3 G
        DISTI # 726-IPB260N06N3G
        Infineon Technologies AGMOSFET N-Ch 200V 27A D2PAK-2
        RoHS: Compliant
        0
          IPB260N06N3GInfineon Technologies AGPower Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant
          1940
          • 1000:$0.3200
          • 500:$0.3300
          • 100:$0.3500
          • 25:$0.3600
          • 1:$0.3900
          画像 モデル 説明
          IPB260N06N3

          Mfr.#: IPB260N06N3

          OMO.#: OMO-IPB260N06N3-1190

          ブランドニューオリジナル
          IPB260N06N3G

          Mfr.#: IPB260N06N3G

          OMO.#: OMO-IPB260N06N3G-1190

          Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          IPB260N06N3GATMA1

          Mfr.#: IPB260N06N3GATMA1

          OMO.#: OMO-IPB260N06N3GATMA1-INFINEON-TECHNOLOGIES

          MOSFET N-CH 60V 27A TO263-3
          IPB260N06N3 G

          Mfr.#: IPB260N06N3 G

          OMO.#: OMO-IPB260N06N3-G-126

          IGBT Transistors MOSFET N-Ch 200V 27A D2PAK-2
          可用性
          ストック:
          Available
          注文中:
          1000
          数量を入力してください:
          IPB260N06N3Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
          参考価格(USD)
          単価
          小計金額
          1
          $0.52
          $0.52
          10
          $0.50
          $4.99
          100
          $0.47
          $47.25
          500
          $0.45
          $223.15
          1000
          $0.42
          $420.00
          2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
          皮切りに
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