RJH60D2DPP-M0#T2

Mfr. #:: RJH60D2DPP-M0#T2
Manufacturer:: Renesas Electronics
Description:: IGBT Transistors IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: RJH60D2DPP-M0#T2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: RJH60D2DPP-M0#T2 Datasheet RJH60D2DPP-M0#T2 Datasheet (P4-P6)RJH60D2DPP-M0#T2 Datasheet (P7-P9)RJH60D2DPP-M0#T2 Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Renesas Electronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Packaging:: Tube

Brand:: Renesas Electronics

Moisture Sensitive:: Yes

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1

Subcategory:: IGBTs

Tags: RJH60D2DPP-M, RJH60D2DPP, RJH60D2D, RJH60D2, RJH60D, RJH60, RJH6, RJH

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

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RJH60D2DPP-M0#T2 Description

***ical: Trans IGBT Chip N-CH 600V 25A 34000mW 3-Pin(3+Tab) TO-220FL Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, HIGH SPEED, 600V, 25A TO-220FL; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 34W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FL; No. of

***p One Stop Global: Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220F Tube

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.

***ow.cn: Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-220F-3FS Tube

*** Electronics: ON SEMICONDUCTOR NGTB15N60R2FG IGBT Single Transistor, 24 A, 1.85 V, 54 W, 600 V, TO-220F, 3 Pins

***ark: Igbt, Single, 600V, 24A, To-220F-3; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:54W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Onsemi NGTB15N60R2FG

*** Source Electronics: Trans IGBT Chip N-CH 600V 30A 178000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 30A 178W TO220-3

*** Stop Electro: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.

***ical: Trans IGBT Chip N-CH 600V 30A 30000mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: STGF15Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 15 A high speed

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins:

***p One Stop: Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220 Tube

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 15 A high speed

***ure Electronics: STGP Series 600 V 30 A 24.5 ns t(on) Trench Gate Field-Stop IGBT - TO-220-3

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***et: Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220FL Tube

***ronik: IGBT 600V 20A 2.5V TO220-3 RoHSconf

***nell: IGBT, HIGH SPEED, 600V, 20A TO-220FL; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FL; No. of

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	Mfr.#: RJH60D2DPP-M0#T2 OMO.#: OMO-RJH60D2DPP-M0-T2	IGBT Transistors IGBT
	Mfr.#: RJH60D2DPE-00#J3 OMO.#: OMO-RJH60D2DPE-00-J3	IGBT Transistors IGBT
	Mfr.#: RJH60D2DPP OMO.#: OMO-RJH60D2DPP-1190	New and Original
	Mfr.#: RJH60D2DPP-M0 OMO.#: OMO-RJH60D2DPP-M0-1190	New and Original
	Mfr.#: RJH60D2DPP-M0T2 OMO.#: OMO-RJH60D2DPP-M0T2-1190	New and Original
	Mfr.#: RJH60D2DPPM0T2 OMO.#: OMO-RJH60D2DPPM0T2-1190	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Availability

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On Order:: 5500
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RJH60D2DPP-M0#T2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes