IRF9Z24NSPBF

IRF9Z24NSPBF
Mfr. #:
IRF9Z24NSPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF9Z24NSPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF9Z24NSPBF DatasheetIRF9Z24NSPBF Datasheet (P4-P6)IRF9Z24NSPBF Datasheet (P7-P9)IRF9Z24NSPBF Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
12 A
Rds On - Drain-Source Resistance:
175 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
12.7 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
45 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 P-Channel
Type:
HEXFET Power MOSFET
Width:
6.22 mm
Brand:
Infineon / IR
Fall Time:
37 ns
Product Type:
MOSFET
Rise Time:
55 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
23 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
SP001551706
Unit Weight:
0.139332 oz
Tags
IRF9Z24NS, IRF9Z24N, IRF9Z24, IRF9Z2, IRF9Z, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
***ical
Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK
***ied Electronics & Automation
MOSFET, P-CHANNEL, -55V, -12A, 175 MOHM, 12.7 NC QG, D2-PAK
***Components
MOSFET P-Channel 55V 12A D2PAK
***i-Key
MOSFET P-CH 55V 12A D2PAK
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-12A; On Resistance, Rds(on):175mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
***nell
MOSFET, P, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:55V; Current, Id Cont:12A; Resistance, Rds On:0.175ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:-4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:48A; External Depth:15.49mm; External Length / Height:4.69mm; Power Dissipation:45W; Power Dissipation on 1 Sq. PCB:3.8W; Power, Pd:45W; SMD Marking:F9Z24NS; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:55V; Width, External:10.54mm
***ment14 APAC
MOSFET, P, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:55V; On Resistance Rds(on):175mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:45W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:-12A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:48A; SMD Marking:F9Z24NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
IRF9Z24NSPBF
DISTI # IRF9Z24NSPBF-ND
Infineon Technologies AGMOSFET P-CH 55V 12A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRF9Z24NSPBF
    DISTI # IRF9Z24NSPBF
    Infineon Technologies AGTrans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRF9Z24NSPBF)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 27
      IRF9Z24NSPBF
      DISTI # 97K2242
      Infineon Technologies AGMOSFET Transistor, P Channel, 12 A, 55 V, 175 mohm, -10 V, -4 V RoHS Compliant: Yes0
        IRF9Z24NSPBFInternational RectifierPower Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        26
        • 1000:$0.6100
        • 500:$0.6400
        • 100:$0.6600
        • 25:$0.6900
        • 1:$0.7500
        IRF9Z24NSPBF
        DISTI # 942-IRF9Z24NSPBF
        Infineon Technologies AGMOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
        RoHS: Compliant
        0
          IRF9Z24NSPBFInternational Rectifier 89
          • 2:$2.6880
          • 11:$1.7472
          • 30:$1.3440
          IRF9Z24NSPBFInternational Rectifier 71
          • 11:$1.8000
          • 4:$2.4000
          • 1:$3.6000
          IRF9Z24NSPBF
          DISTI # 9103180
          Infineon Technologies AGMOSFET, P, D2-PAK
          RoHS: Compliant
          0
          • 1:$2.4300
          • 10:$2.1700
          • 100:$1.6900
          • 500:$1.4000
          Image Part # Description
          IRF9Z24PBF

          Mfr.#: IRF9Z24PBF

          OMO.#: OMO-IRF9Z24PBF

          MOSFET P-CH -60V HEXFET MOSFET
          IRF9Z24SPBF

          Mfr.#: IRF9Z24SPBF

          OMO.#: OMO-IRF9Z24SPBF-VISHAY

          MOSFET P-CH 60V 11A D2PAK
          IRF9Z24NPBF

          Mfr.#: IRF9Z24NPBF

          OMO.#: OMO-IRF9Z24NPBF-INFINEON-TECHNOLOGIES

          MOSFET P-CH 55V 12A TO-220AB
          IRF9Z24NPBF , 2SK1060-Z-

          Mfr.#: IRF9Z24NPBF , 2SK1060-Z-

          OMO.#: OMO-IRF9Z24NPBF-2SK1060-Z--1190

          New and Original
          IRF9Z24NPBF,F9Z24N,IRF9Z

          Mfr.#: IRF9Z24NPBF,F9Z24N,IRF9Z

          OMO.#: OMO-IRF9Z24NPBF-F9Z24N-IRF9Z-1190

          New and Original
          IRF9Z24NPBF-MEX

          Mfr.#: IRF9Z24NPBF-MEX

          OMO.#: OMO-IRF9Z24NPBF-MEX-1190

          New and Original
          IRF9Z24NS

          Mfr.#: IRF9Z24NS

          OMO.#: OMO-IRF9Z24NS-INFINEON-TECHNOLOGIES

          MOSFET P-CH 55V 12A D2PAK
          IRF9Z24NSTRR

          Mfr.#: IRF9Z24NSTRR

          OMO.#: OMO-IRF9Z24NSTRR-INFINEON-TECHNOLOGIES

          MOSFET P-CH 55V 12A D2PAK
          IRF9Z24S

          Mfr.#: IRF9Z24S

          OMO.#: OMO-IRF9Z24S-VISHAY

          MOSFET P-CH 60V 11A D2PAK
          IRF9Z24

          Mfr.#: IRF9Z24

          OMO.#: OMO-IRF9Z24-VISHAY

          MOSFET P-Chan 60V 11 Amp
          Availability
          Stock:
          Available
          On Order:
          1500
          Enter Quantity:
          Current price of IRF9Z24NSPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
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