IRF9Z24NS

IRF9Z24NSPBF vs IRF9Z24NSTRL vs IRF9Z24NS

 
PartNumberIRF9Z24NSPBFIRF9Z24NSTRLIRF9Z24NS
DescriptionMOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nCMOSFET P-CH 55V 12A D2PAKMOSFET P-CH 55V 12A D2PAK
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance175 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge12.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation45 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 P-Channel--
TypeHEXFET Power MOSFET--
Width6.22 mm--
BrandInfineon / IR--
Fall Time37 ns--
Product TypeMOSFET--
Rise Time55 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesSP001551706--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF9Z24NSTRLPBF MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC
IRF9Z24NSTRL MOSFET P-CH 55V 12A D2PAK
IRF9Z24NS MOSFET P-CH 55V 12A D2PAK
IRF9Z24NSTRR MOSFET P-CH 55V 12A D2PAK
IRF9Z24NSTRLPBF Darlington Transistors MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC
IRF9Z24NSPBF Darlington Transistors MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
Infineon / IR
Infineon / IR
IRF9Z24NSPBF MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
IRF9Z24NSTRLPBF-CUT TAPE New and Original
IRF9Z24NS F9Z24NS New and Original
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