SI7956DP-T1-E3

Mfr. #:: SI7956DP-T1-E3
メーカー:: Vishay
説明:: RF Bipolar Transistors MOSFET DUAL N-CH 150V (D-S)
ライフサイクル:: メーカー新製品
データシート:: SI7956DP-T1-E3 データシート
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製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-アレイ

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI7956DP-E3

単位重量: 0.017870 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: PowerPAKR SO-8 Dual

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR SO-8 Dual

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 1.4W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 150V

入力-静電容量-Ciss-Vds: -

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 2.6A

Rds-On-Max-Id-Vgs: 105 mOhm @ 4.1A, 10V

Vgs-th-Max-Id: 4V @ 250μA

ゲートチャージ-Qg-Vgs: 26nC @ 10V

Pd-電力損失: 1.4 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 36 ns

立ち上がり時間: 36 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 2.6 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 150 V

Rds-On-Drain-Source-Resistance: 105 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 18 ns

典型的なターンオン遅延時間: 13 ns

チャネルモード: 強化

Tags: SI795, SI79, SI7

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7956DP-T1-E3 説明

***th Star Micro: Transistor MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET 2N-CH 150V 2.6A PPAK SO-8

***ark: Transistor; Continuous Drain Current, Id:4100mA; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes

Market price

モデル	メーカー	説明	ストック	価格
SI7956DP-T1-E3 DISTI # V72:2272_09216419	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	5440	3000:$1.6610 1000:$1.6790 500:$1.8390 250:$2.0010 100:$2.1210 25:$2.3950 10:$2.4750 1:$2.7350
SI7956DP-T1-E3 DISTI # SI7956DP-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 150V 2.6A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.6678
SI7956DP-T1-E3 DISTI # 31339702	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R RoHS: Compliant	5440	3000:$1.6870 1000:$1.6930 500:$1.8510 250:$2.0150 100:$2.1320 25:$2.4070 10:$2.4880 5:$2.7530
SI7956DP-T1-E3 DISTI # SI7956DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7956DP-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.5900 6000:$1.5900 12000:$1.4900 18000:$1.4900 30000:$1.3900
SI7956DP-T1-E3 DISTI # 57J5757	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 150V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.1A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.115ohm,Rds(on) Test Voltage Vgs:20V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$1.6400 2000:$1.5700 4000:$1.4700 8000:$1.3600 12000:$1.3100 20000:$1.2900
SI7956DP-T1-E3 DISTI # 781-SI7956DP-T1-E3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	0	1:$3.2000 10:$2.6500 100:$2.1800 250:$2.1100 500:$1.9000 1000:$1.6000 3000:$1.5200
SI7956DP-T1-E3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas -
SI7956DP-T1-E3 DISTI # C1S803601298506	Vishay Intertechnologies	MOSFETs	5440	250:$2.0150 100:$2.1320 25:$2.4070 10:$2.4880 1:$2.7530

画像	モデル	説明
	Mfr.#: SI7956DP-T1-GE3 OMO.#: OMO-SI7956DP-T1-GE3	MOSFET 150V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7956DP-T1-E3 OMO.#: OMO-SI7956DP-T1-E3	MOSFET 150V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7956DP-T1-E3 OMO.#: OMO-SI7956DP-T1-E3-VISHAY	RF Bipolar Transistors MOSFET DUAL N-CH 150V (D-S)
	Mfr.#: SI7956DP-T1-GE3 OMO.#: OMO-SI7956DP-T1-GE3-VISHAY	MOSFET 2N-CH 150V 2.6A PPAK SO-8

SI7956DP-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes