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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| RFP4N05LP2158 | HARTING Technology Group | RoHS: Not Compliant | 812 |
| Image | Part # | Description |
|---|---|---|
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Mfr.#: RFP4N05 OMO.#: OMO-RFP4N05-1190 |
Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP4N05+ OMO.#: OMO-RFP4N05--1190 |
Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP4N05L OMO.#: OMO-RFP4N05L-1190 |
- Bulk (Alt: RFP4N05L) |
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Mfr.#: RFP4N05LP2158 OMO.#: OMO-RFP4N05LP2158-1190 |
New and Original |
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Mfr.#: RFP4N05LS OMO.#: OMO-RFP4N05LS-1190 |
New and Original |
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Mfr.#: RFP4N05LS2515 OMO.#: OMO-RFP4N05LS2515-1190 |
New and Original |
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Mfr.#: RFP4N06 OMO.#: OMO-RFP4N06-1190 |
Power Field-Effect Transistor, 4A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP4N06L OMO.#: OMO-RFP4N06L-1190 |
New and Original |