PSMN6R3-120PS

Product Attribute

Attribute Value

Manufacturer:

Nexperia

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

120 V

Id - Continuous Drain Current:

70 A

Rds On - Drain-Source Resistance:

19.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.6 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

207.1 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

405 W

Configuration:

Single

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

Nexperia

Fall Time:

67.7 ns

Product Type:

MOSFET

Rise Time:

58.2 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

142.1 ns

Typical Turn-On Delay Time:

42.1 ns

Unit Weight:

0.211644 oz

Tags

PSMN6, PSMN, PSM